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參數(shù)資料
| 型號(hào)： | TCLT1105 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 光電耦合器 |
| 英文描述： | Optocoupler - Transistor Output, 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER, ROHS COMPLIANT, SMD, SOP-5 |
| 中文描述： | Transistor Output Optocouplers Phototransistor Out Single CTR 50-150% |
| 文件頁(yè)數(shù)： | 3/6頁(yè) |
| 文件大?。?/td> | 113K |
| 代理商： | TCLT1105 |
TCLT110. Series
Vishay Semiconductors
www.vishay.com
Rev. 2.3, 22-Sep-11
3
Document Number: 83514
For technical questions, contact:
optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
Note
According to DIN EN 60747-5-2 (VDE 0884) (see figure 2). This optocoupler is suitable for safe electrical isolation only within the safety
ratings. Compliance with the safety ratings shall be ensured by means of suitable protective circuits.
Fig. 1 - Derating Diagram
Fig. 2 - Test Pulse Diagram for Sample Test According to
DIN EN 60747-5-2 (VDE 0884); IEC 60747-5-5
CURRENT TRANSFER RATIO
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
V
CE
= 5 V, I
F
= 5 mA
PART
TCLT1100
TCLT1102
TCLT1103
TCLT1104
TCLT1102
TCLT1103
TCLT1104
TCLT1105
TCLT1106
TCLT1107
TCLT1108
TCLT1109
SYMBOL
CTR
CTR
CTR
CTR
CTR
CTR
CTR
CTR
CTR
CTR
CTR
CTR
MIN.
50
63
100
160
22
34
56
50
100
80
130
200
TYP.
MAX.
600
125
200
320
UNIT
%
%
%
%
%
%
%
%
%
%
%
%
I
C
/I
F
V
CE
= 5 V, I
F
= 10 mA
V
CE
= 5 V, I
F
= 1 mA
45
70
100
V
CE
= 5 V, I
F
= 5 mA
150
300
160
260
400
SAFETY AND INSULATION RATED PARAMETERS
PARAMETER
Partial discharge test voltage -
routine test
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
100 %, t
test
= 1 s
V
pd
2.0
kV
Partial discharge test voltage -
lot test (sample test)
t
Tr
= 60 s, t
= 10 s,
(see figure 2)
V
IOTM
V
pd
R
IO
R
IO
8
kV
kV
Ω
Ω
1.68
10
12
10
11
Insulation resistance
V
IO
= 500 V
V
IO
= 500 V, T
amb
= 100 °C
V
IO
= 500 V, T
amb
= 150 °C
(construction test only)
R
IO
10
9
Ω
Forward current
Power dissipation
Rated impulse voltage
Safety temperature
Clearance distance
Creepage distance
Insulation distance (internal)
I
si
P
so
V
IOTM
T
si
130
265
8
150
8.0
8.0
0.40
mA
mW
kV
°C
mm
mm
mm
0
25
T
si
- Safety Temperature (°C)
50
75
125
0
50
100
150
200
300
150
94 9182-2
100
250
IR-diode
I
si
(mA)
Phototransistor
P
so
(mW)
t
13930
t
1
, t
2
= 1 s to 10 s
t
3
, t
4
= 1 s
t
test
= 10 s
t
stres
= 12 s
V
IOTM
V
pd
V
IOWM
V
IORM
0
t
1
t
test
t
Tr
= 60 s
t
stres
t
3
t
4
t
2
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TCLT1105 | 制造商:Vishay Intertechnologies 功能描述:OPTOCOUPLER SMD TRANSISTOR O/P |
| TCLT1106 | 功能描述:晶體管輸出光電耦合器 Phototransistor Out Single CTR 100-300% RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk |
| TCLT1106 | 制造商:Vishay Intertechnologies 功能描述:OPTOCOUPLER SMD TRANSISTOR O/P |
| TCLT1107 | 功能描述:晶體管輸出光電耦合器 Phototransistor Out Single CTR 80-160% RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk |
| TCLT1107 | 制造商:Vishay Intertechnologies 功能描述:OPTOCOUPLER SMD TRANS O/P |
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