參數(shù)資料
型號: TCLT1600
廠商: VISHAY SEMICONDUCTORS
元件分類: 光電耦合器
英文描述: Optocoupler AC-IN 1-CH Transistor DC-OUT 4-Pin SOP
中文描述: Transistor Output Optocouplers Phototransistor Out Single CTR 80-300%
文件頁數(shù): 3/6頁
文件大小: 120K
代理商: TCLT1600
Alternative Device Available
TCLT1600
www.vishay.com
Vishay Semiconductors
Rev. 2.4, 23-May-13
3
Document Number: 83517
For technical questions, contact:
optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
Note
According to DIN EN 60747-5-2 (VDE 0884) (see figure 2). This optocoupler is suitable for safe electrical isolation only within the safety
ratings. Compliance with the safety ratings shall be ensured by means of suitable protective circuits.
Fig. 1 - Derating Diagram
Fig. 2 - Test Pulse Diagram for Sample Test according to
DIN EN 60747-5-2; IEC60747-5-5
SAFETY AND INSULATION PARAMETERS
PARAMETER
Partial discharge test voltage -
routine test
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
100 %, t
test
= 1 s
V
pd
2
kV
Partial discharge test voltage -
lot test (sample test)
t
Tr
= 60 s, t
test
= 10 s,
(see figure 2)
V
IOTM
V
pd
R
IO
R
IO
8
kV
kV
1.68
10
12
10
11
Insulation resistance
V
IO
= 500 V
V
IO
= 500 V, T
amb
= 100 °C
V
IO
= 500 V, T
150 °C
(construction test only)
R
IO
10
9
Forward current
Power dissipation
Rated impulse voltage
Safety temperature
Clearance distance
Creepage distance
Insulation distance (internal)
I
si
130
265
8
150
mA
mW
kV
°C
mm
mm
mm
P
SO
V
IOTM
T
si
8.00
8.00
0.40
0
25
50
75
125
0
50
100
150
200
300
T
SI
- Safety Temperature (°C)
150
100
250
Phototransistor
P
SO
(mW)
IR-diode
I
SI
(mA)
t
13930
t
1
, t
2
= 1 s to 10 s
t
3
, t
4
= 1 s
t
test
= 10 s
t
stres
= 12 s
V
IOTM
V
pd
V
IOWM
V
IORM
0
t
1
t
test
t
Tr
= 60 s
t
stres
t
3
t
4
t
2
SWITCHING CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
V
S
= 5 V, I
= 2 mA, R
L
= 100
,
(see figure 3)
V
S
= 5 V, I
= 2 mA, R
L
= 100
,
(see figure 3)
V
S
= 5 V, I
= 2 mA, R
L
= 100
,
(see figure 3)
V
S
= 5 V, I
= 2 mA, R
L
= 100
,
(see figure 3)
V
S
= 5 V, I
= 2 mA, R
L
= 100
,
(see figure 3)
V
S
= 5 V, I
= 2 mA, R
L
= 100
,
(see figure 3)
V
S
= 5 V, I
= 10 mA, R
L
= 1 k
,
(see figure 4)
V
S
= 5 V, I
= 10 mA, R
L
= 1 k
,
(see figure 4)
SYMBOL
MIN.
TYP.
MAX.
UNIT
Delay time
t
d
3
μs
Rise time
t
r
3
μs
Turn-on time
t
on
6
μs
Storage time
t
s
0.3
μs
Fall time
t
f
4.7
μs
Turn-off time
t
off
5
μs
Turn-on time
t
on
9
μs
Turn-off time
t
off
10
μs
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