參數(shù)資料
型號: TCMT4100
廠商: VISHAY SEMICONDUCTORS
元件分類: 光電耦合器
英文描述: Optocoupler DC-IN 4-CH Transistor DC-OUT 16-Pin Mini-Flat T/R
中文描述: Transistor Output Optocouplers Phototransistor Out Quad CTR 50-600%
文件頁數(shù): 2/7頁
文件大?。?/td> 130K
代理商: TCMT4100
Alternative Device Available
TCMT110. Series
Vishay Semiconductors
www.vishay.com
Rev. 2.9, 23-May-13
2
Document Number: 83510
For technical questions, contact:
optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
Notes
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(1)
Wave soldering three cycles are allowed. Also refer to “Assembly Instructions” (
www.vishay.com/doc80054
).
Note
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
INPUT
Reverse voltage
Forward current
Forward surge current
Power dissipation
Junction temperature
OUTPUT
Collector emitter voltage
Emitter collector voltage
Collector current
Collector peak current
t
p
/T = 0.5, t
p
10 ms
Power dissipation
Junction temperature
COUPLER
Related to standard climate 23/50
SYMBOL
VALUE
UNIT
V
R
I
F
I
FSM
P
diss
T
j
6
V
60
1.5
100
125
mA
A
mW
°C
t
p
10 μs
V
CEO
V
ECO
I
C
I
CM
P
diss
T
j
70
7
50
100
150
125
V
V
mA
mA
mW
°C
AC isolation test voltage (RMS)
DIN 50014
V
ISO
3750
V
RMS
Total power dissipation
Operating ambient temperature range
Storage temperature range
Soldering temperature
(1)
P
tot
T
amb
T
stg
T
sld
250
mW
°C
°C
°C
- 40 to + 100
- 40 to + 125
260
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
INPUT
Forward voltage
I
F
= 50 mA
Junction capacitance
V
R
= 0, f = 1 MHz
OUTPUT
Collector emitter voltage
I
C
= 100 μA
Emitter collector voltage
I
E
= 100 μA
Collector dark current
V
CE
= 20 V, I
F
= 0 A
COUPLER
Collector emitter saturation voltage
I
F
= 10 mA, I
C
= 1 mA
V
CE
= 5 V, I
= 10 mA,
R
L
= 100
Coupling capacitance
f = 1 MHz
SYMBOL
MIN.
TYP.
MAX.
UNIT
V
F
C
j
1.25
50
1.6
V
pF
V
CEO
V
ECO
I
CEO
70
7
V
V
nA
100
V
CEsat
0.3
V
Cut-off frequency
f
c
100
kHz
C
k
0.3
pF
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