參數(shù)資料
型號(hào): TDA1572
廠(chǎng)商: NXP SEMICONDUCTORS
元件分類(lèi): 接收器
英文描述: AM receiver circuit
中文描述: AM, AUDIO SINGLE CHIP RECEIVER, PDIP18
封裝: 0.300 INCH, PLASTIC, DIP-18
文件頁(yè)數(shù): 2/19頁(yè)
文件大?。?/td> 229K
代理商: TDA1572
December 1987
2
Philips Semiconductors
Product specification
AM receiver circuit
TDA1572
GENERAL DESCRIPTION
The TDA1572 integrated AM receiver circuit performs all the active functions and part of the filtering required of an AM
radio receiver. It is intended for use in mains-fed home receivers and car radios. The circuit can be used for oscillator
frequencies up to 50 MHz and can handle RF signals up to 500 mV.
RF radiation and sensitivity to interference are minimized by an almost symmetrical design. The controlled-voltage
oscillator provides signals with extremely low distortion and high spectral purity over the whole frequency range, even
when tuning with variable capacitance diodes. If required, band switching diodes can easily be applied. Selectivity is
obtained using a block filter before the IF amplifier.
Features
Inputs protected against damage by static discharge
Gain-controlled RF stage
Double balanced mixer
Separately buffered, voltage-controlled and temperature-compensated oscillator, designed for simple coils
Gain-controlled IF stage with wide AGC range
Full-wave, balanced envelope detector
Internal generation of AGC voltage with possibility of second-order filtering
Buffered field strength indicator driver with short-circuit protection
AF preamplifier with possibilities for simple AF filtering
Electronic standby switch
IF output for stereo demodulator and search tuning.
QUICK REFERENCE DATA
PACKAGE OUTLINE
18-lead DIL; plastic (SOT102); SOT102-1; 1996 August 12.
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
Supply voltage range
Supply current range
RF input voltage
for (S
+
N)/N = 6 dB at m = 30%
RF input voltage for 3% total
harmonic distortion (THD) at m = 80%
IF output voltage with V
i
= 2 mV
AF output voltage with V
i
= 2 mV;
f
i
= 1 MHz; m = 30%; f
m
= 400 Hz
AGC range: change of V
i
for
1 dB change of V
o(AF)
Field strength indicator voltage at V
i
= 500 mV;
R
L(11)
= 2,7 k
V
P
I
P
7,5
15
18,0
30
V
mA
V
i(RF)
1,5
μ
V
V
i(RF)
V
o(IF)
500
230
mV
mV
V
o(AF)
310
mV
86
dB
V
IND
2,8
V
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