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參數(shù)資料
| 型號： | TDA5155 |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | Pre-amplifier for Hard Disk Drive HDD with MR-read/inductive write heads |
| 中文描述： | 預(yù)硬盤驅(qū)動(dòng)器硬盤驅(qū)動(dòng)器放大器MR-read/inductive寫磁頭 |
| 文件頁數(shù)： | 21/24頁 |
| 文件大?。?/td> | 112K |
| 代理商： | TDA5155 |
1997 Apr 08
21
Philips Semiconductors
Preliminary specification
Pre-amplifier for Hard Disk Drive (HDD)
with MR-read/inductive write heads
TDA5155
Notes to the characteristics
1.
The differential voltage gain depends on the MR
resistance. It can be improved by programming the
d4 bit in the configuration register.
2.
The gain boost implements a pole-zero combination:
The +3 dB gain boost corner frequency is
8.d3
4.d2
2.d1
1.d0
+
+
+
. The
3 dB gain
attenuation corner frequency is
8.d3
4.d2
2.d1
+
+
, where d3, d2, d1 and d0
are to be programmed via the serial interface. In
practical use, the bandwidth is limited by the
inductance of the connection between the MR heads
and the pre-amplifier.
3.
Noise calculation
a)
Definitions:
The amplifier has a low input
resistance. No lead resistance is taken into
account. The input referred noise voltage,
excluding the noise of the MR resistors, is defined
V
G
v
as:
,
where G
v
is the voltage gain, V
no
is the noise
voltage at the output of the amplifier, k is the
Boltzmann constant and T is the temperature in K.
The noise figure is defined as follows:
V
G
4kT
R
MR1
in 1 Hz
bandwidth. Note that R
MR
includes all resistances
between Rx or Ry to ground.
b)
Noise figure versus I
MR
and R
MR
:
Table 1 shows
the variation of the noise figure with I
MR
and R
MR
.
c)
Input referred noise voltage:
The input referred
noise voltage calculation can be significantly
different (from 1.0 to 0.44 nV/
√
Hz for instance) by
taking an equivalent signal-to-noise ratio into
account when using two MR stripes (28
for each
stripe) or one MR stripe (42
). It assumes that the
signal coming from the head is larger for a
dual-stripe head than for a single-stripe head (50%
extra signal for a dual-stripe head).
The channel separation is defined by the ratio of the
gain response of the amplifier using the selected head
H(n) to the gain response of the amplifier using the
adjacent head H(n
±
1), head H(n) being selected.
4.
---------------------800 MHz
1.d0
+
---------------------800 MHz
V
irn
(
)
2
--------
2
4kT
R
MR1
R
MR2
+
(
)
×
–
=
F
10
---------
2
R
MR2
+
(
)
×
-----------------------------------------------------------
log
×
=
5.
The PSRR (in dB) is defined as input referred ratio:
logG
v
p
, where G
v
is the differential input
to differential output gain, and G
p
is the power supply
to differential output gain.The CMRR (in dB) is defined
as input referred ratio:
, where
G
v
is the differential input to differential output gain and
G
cm
is the common mode input to differential output
gain. Flex and board lay-out may affect these
parameters significantly.
This refers to the crosstalk from SCLK and SDATA
inputs via the read inputs to RDx and RDy. Two cases
can be distinguished:
a) When SEN is LOW, SCLK and SDATA are
prohibited reaching the device and crosstalk is low.
b) Programming via the serial interface is done with
SEN HIGH. Then crosstalk can occur. A careful
design of the board or flex-foil is required to avoid
crosstalk via this path.
The rise and fall times depend on the
write amplifier/write head combination. L
h
and R
h
represent the components on the evaluation board.
Parasitic capacitances also limit the performance.
6.
7.
8.
The write current rise/fall time asymmetry is defined by
t
t
–
2 t
r
t
f
+
9.
Write-to-read recovery time includes the write mode to
read mode switching using the R/W pin on the same
head (see Fig.5). The AC signal reaches its full
amplitude few tens of ns after appearing at the reader
RDx and RDy outputs.
10. In read mode, the head switching, standby to read
active switching and changing MR current include fast
current settling (see Fig.5). The AC signal reaches its
full amplitude few tenth of ns after appearing at the
reader RDx and RDy outputs.
11. Write settling time includes the read mode to write
mode switching using the R/W pin.
12. The typical supply current in read mode depends on
the bias current for the MR element.
13. The typical supply current in write mode also depends
on the write current.
PSRR
20
G
×
=
CMRR
20
log
G
v
G
cm
----------
×
=
(
)
-----------------------
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