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參數(shù)資料
| 型號： | TDA5744TS |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 衰減器 |
| 英文描述： | Low power mixers/oscillators for hyperband tuners |
| 中文描述： | RF/MICROWAVE DOUBLE BALANCED MIXER |
| 文件頁數(shù)： | 7/20頁 |
| 文件大小： | 123K |
| 代理商： | TDA5744TS |
1998 Mar 09
7
Philips Semiconductors
Preliminary specification
Low power mixers/oscillators for
hyperband tuners
TDA5744; TDA5745
g
i
input conductance
f
RF
= 45.25 MHz
f
RF
= 399.25 MHz
f
RF
= 45.25 to 399.25 MHz
f
RF
= 45.25 MHz; see Fig.6
f
RF
= 399.25 MHz; see Fig.6
f
RF
= 399.25 MHz; note 1
116
116
0.25
0.5
2
119
119
88
mS
mS
pF
dB
μ
V
dB
μ
V
dB
μ
V
C
i
V
o
input capacitance
output voltage causing 1%
cross modulation in channel
V
i
input voltage causing pulling
in channel (750 Hz)
voltage gain
G
V
f
RF
= 45.25 MHz; see Fig.4
f
RF
= 399.25 MHz; see Fig.4
24.5
24.5
27
27
29.5
29.5
dB
dB
VHF oscillator
f
osc
f
osc(V)
oscillator frequency
oscillator frequency shift
with supply voltage
84.15
100
200
438.15 MHz
200
V
CC
= 5%; note 2
V
CC
= 10%; worst case in the
frequency range; note 2
T = 25
°
C without compensation: NP0
capacitors; worst case in the frequency
range; note 3
worst case in the frequency range;
note 4
±
100 kHz frequency offset; worst case
in the frequency range
V
CC
= 5 V; worst case in the frequency
range; ripple frequency 500 kHz; note 5
kHz
kHz
f
osc(T)
oscillator frequency drift
with temperature
1300
tbf
kHz
f
osc(t)
oscillator frequency drift
with time
phase noise,
carrier-to-noise sideband
ripple susceptibility of V
CC
(peak-to-peak value)
600
tbf
kHz
Φ
osc
106
dBc/Hz
RSC
(p-p)
15
40
mV
UHF mixer (including IF amplifier)
f
i(RF)
F
RF input frequency
noise figure
picture carrier frequency
f
RF
= 407.25 MHz; see Fig.10
f
RF
= 855.25 MHz; not corrected for
image; see Fig.10
f
RF
= 407.25 MHz
f
RF
= 855.25 MHz
f
RF
= 407.25 MHz
f
RF
= 855.25 MHz
f
RF
= 407.25 MHz; see Fig.7
f
RF
= 855.25 MHz; see Fig.7
f
RF
= 855.25 MHz; note 1
407.25
855.25 MHz
10
11
8
9
dB
dB
R
s
real part of Z
i
= R
s
+ j
ω
L
s
116
114
30
38
9
6
119
117
78
nH
nH
dB
μ
V
dB
μ
V
dB
μ
V
L
s
imaginary part of
Z
i
= R
s
+ j
ω
L
s
V
o
output voltage causing 1%
cross modulation in channel
V
i
input voltage causing pulling
in channel (750 Hz)
voltage gain
G
V
f
RF
= 407.25 MHz; see Fig.4
f
RF
= 855.25 MHz; see Fig.4
35
35
38
38
41
41
dB
dB
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
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