參數(shù)資料
型號: TDA5745
廠商: NXP Semiconductors N.V.
英文描述: Low power mixers/oscillators for hyperband tuners
中文描述: 低功耗混頻器/振蕩器的調(diào)諧器的hyperband
文件頁數(shù): 8/20頁
文件大?。?/td> 123K
代理商: TDA5745
1998 Mar 09
8
Philips Semiconductors
Preliminary specification
Low power mixers/oscillators for
hyperband tuners
TDA5744; TDA5745
Notes
1.
This is the level of the RF signal (100% amplitude modulated with 11.89 kHz) that causes a 750 Hz frequency
deviation on the oscillator signal; it produces sidebands 30 dB below the level of the oscillator signal.
The frequency shift is defined as the change of the oscillator frequency when the supply voltage varies from
V
CC
= 5 to 4.5 V or from V
CC
= 5 to 5.25 V. The oscillator is free-running during this measurement.
The frequency drift is defined as the change of the oscillator frequency when the ambient temperature varies from
T
amb
= 25 to 0
°
C or from T
amb
= 25 to 50
°
C. The oscillator is free-running during this measurement.
The switching on drift is defined as the change of the oscillator frequency between 5 seconds and 15 minutes after
switching on. The oscillator is free-running during this measurement.
The ripple susceptibility is measured for a 500 kHz ripple at the IF amplifier output using the measurement circuit;
the level of the ripple signal is increased until a difference of 53.5 dB between the IF carrier set at 100 dB
μ
V and the
sideband components is reached.
Channel x beat: picture carrier frequency (f
pc
) and sound carrier frequency (f
sc
) both at 80 dB
μ
V.
The rejection of the interfering product f
pc(RF)
+ f
sc(RF)
f
osc
at 35.35 MHz should be >60 dB.
Channel S02: f
pc
is 76.25 MHz at 70 dB
μ
V; f
osc
= 115.15 MHz.
The rejection of f
osc
2
×
f
IF
= 37.35 MHz should be >66 dB.
2.
3.
4.
5.
6.
7.
UHF oscillator
f
osc
f
osc(V)
oscillator frequency
oscillator frequency shift
with supply voltage
446.15
894.15 MHz
80
tbf
V
CC
= 5%; note 2
V
CC
= 10%; worst case in the
frequency range; note 2
T = 25
°
C; with compensation; worst
case in the frequency range; note 3
worst case in the frequency range;
note 4
±
100 kHz frequency offset; worst case
in the frequency range
V
CC
= 5 V; worst case in the frequency
range; ripple frequency 500 kHz; note 5
30
80
kHz
kHz
f
osc(T)
oscillator frequency drift
with temperature
oscillator frequency drift
with time
phase noise,
carrier-to-noise sideband
ripple susceptibility of V
CC
(peak-to-peak value)
600
tbf
kHz
f
osc(t)
200
tbf
kHz
Φ
osc
106
dBc/Hz
RSC
(p-p)
15
20
mV
Rejection at the IF amplifier output
INT
CHX
INT
S02
channel x beat
S02 beat
note 6
note 7
60
66
dBc
dBc
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
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