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參數(shù)資料
| 型號： | TDA5745TS |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 衰減器 |
| 英文描述： | DIODE: SCHOTTKY, 60V, 1A, PACKAGE SMA |
| 中文描述： | RF/MICROWAVE DOUBLE BALANCED MIXER |
| 文件頁數(shù)： | 6/20頁 |
| 文件大?。?/td> | 123K |
| 代理商： | TDA5745TS |
1998 Mar 09
6
Philips Semiconductors
Preliminary specification
Low power mixers/oscillators for
hyperband tuners
TDA5744; TDA5745
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
CHARACTERISTICS
V
CC
= 5 V; T
amb
= 25
°
C; unless otherwise specified; measured in Fig.11.
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
I
O(n)
output current of each pin to ground:
for TDA5744; pins 1 to 6, 9 and 13 to 24
for TDA5745; pins 1 to 12, 16 and 19 to 24
maximum short-circuit time (all pins to V
CC
and all pins to GND and RFGND)
IC storage temperature
operating ambient temperature
junction temperature
40
20
10
10
10
+150
+85
150
mA
mA
s
°
C
°
C
°
C
t
sc(max)
T
stg
T
amb
T
j
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th(j-a)
thermal resistance from junction to ambient
in free air
119
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Supplies
V
CC
I
CC
V
sw(VHF)
V
sw(UHF)
I
sw(VHF)
I
sw(UHF)
supply voltage
supply current
VHF band switching voltage
UHF band switching voltage
VHF band switching current
UHF band switching current
4.5
0
3
5
58
4.5
5.5
65
2
V
CC
2
10
V
mA
V
V
μ
A
μ
A
V
sw(UHF)
= 5 V
IF amplifier
S
22
output reflection coefficient
magnitude
phase
12.5
1.4
81
9.5
dB
deg
nH
R
s
L
s
real part of Z
o
= R
s
+ j
ω
L
s
imaginary part of
Z
o
= R
s
+ j
ω
L
s
VHF mixer (including IF amplifier)
f
i(RF)
F
RF input frequency
noise figure
picture carrier frequency
f
RF
= 50 MHz; see Figs 8 and 9
f
RF
= 150 MHz; see Figs 8 and 9
f
RF
= 300 MHz
f
RF
= 50 MHz
f
RF
= 150 MHz
f
RF
= 300 MHz
45.25
7
8
9
0.7
0.9
1.5
399.25 MHz
9
10
11
dB
dB
dB
mS
mS
mS
g
os
optimum source
conductance for noise figure
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