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參數(shù)資料
| 型號(hào)： | TDA8050A |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 通信及網(wǎng)絡(luò) |
| 英文描述： | QPSK transmitter |
| 中文描述： | SPECIALTY TELECOM CIRCUIT, PDSO32 |
| 封裝： | PLASTIC, SO-32 |
| 文件頁數(shù)： | 8/28頁 |
| 文件大?。?/td> | 125K |
| 代理商： | TDA8050A |
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1999 Nov 05
8
Philips Semiconductors
Product specification
QPSK transmitter
TDA8050A
Programmable gain and output buffer;
note 1
Z
i(dif)
G
buf
O
differential input impedance
output level step size
output level adjust range
32
5.6
39
2
k
dB
dB
V
i
= 30 dBmV sine wave
65 MHz at pins
RF_IN and RF_INC;
DAC = 0 to 31
V
o
V
o
operational output level
output flatness
55
3
5
dBmV
dB
f = 5 to 65 MHz; V
i
= 30 dBmV
sine wave; DAC = 28
output buffer on
output buffer off
V
i
= 100 mV
dif
; DAC = 28;
f = 65 MHz; OE = 0,5 V
see Fig.5
see Fig.5
f = 10 to 65 MHz; see Fig.6
f = 65 to 120 MHz; see Fig.6
f = 15 to 65 MHz; see Fig.6
f = 65 to 120 MHz; see Fig.6
V
IL(ENL)
V
IH(ENH)
ISO
output controlled enable low
output controlled enable high
disable isolation
2.4
35
90
0.8
V
V
dBc
G
V(max)
V
o(1dB)
H
2
maximum gain
1 dB compression point
2nd order harmonic of
5 to 65 MHz signal
17
58
18.5
45
35
45
35
dB
dBmV
dBc
dBc
dBc
dBc
H
3
3rd order harmonic
of 5 to 65 MHz signal
Overall;
note 1
Φ
osc
phase noise
at 10 kHz; note 2
at 100 kHz; note 2
f = 10 to 130 MHz;
V
in
= 100 mV
dif
at I and Q
inputs; V
out
= 55 dBmV
f = 15 to 195 MHz;
V
in
= 100 mV
dif
at I and Q
inputs; V
out
= 55 dBmV
f = 5 to 65 MHz; V
in
= 100 mV
dif
at I and Q inputs;
V
out
= 55 dBmV
75
95
40
dBc/Hz
dBc/Hz
dBc
H
2
2nd order harmonic of
5 to 65 MHz signal
H
3
3rd order harmonic
of 5 to 65 MHz signal
40
dBc
S
o
spurious signals of 5 to 65 MHz
signal
45
dBc
IP
3
3rd order interception point at
I input
total isolation at I/Q midrange
carrier to noise ratio at final
output at 2 MHz from carrier
49
dBmV
ISO
tot
C/N
see Fig.7
V
in
= 100 mV
dif
;
V
out
= 35 to 55 dBmV;
f = 65 MHz
90
113
65
dBc
dBc/Hz
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
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