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參數(shù)資料
| 型號： | TDA8060TS |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 衰減器 |
| 英文描述： | Satellite ZERO-IF QPSK down-converter |
| 中文描述： | RF/MICROWAVE DOWN CONVERTER |
| 封裝： | PLASTIC, SSOP-24 |
| 文件頁數(shù)： | 5/16頁 |
| 文件大小： | 87K |
| 代理商： | TDA8060TS |
2000 Nov 10
5
Philips Semiconductors
Product specification
Satellite ZERO-IF QPSK down-converter
TDA8060ATS
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
HANDLING
Inputs and outputs are protected against electrostatic discharge in normal handling. However, to be totally safe, it is
desirable to take normal precautions appropriate to handling MOS devices.
THERMAL CHARACTERISTICS
DC CHARACTERISTICS
V
CC
= 4.75 to 5.25 V; T
amb
=
20 to +85
°
C; unless otherwise specified.
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
V
CC
V
i(max)
t
sc(max)
T
amb
T
stg
T
j
supply voltage
maximum input voltage on all pins
maximum short-circuit time
ambient temperature
storage temperature
junction temperature
0.3
0.3
20
55
+6.0
V
CC
10
+85
+150
150
V
V
s
°
C
°
C
°
C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th(j-a)
thermal resistance from junction to ambient
in free air
120
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
CC
I
CC
supply voltage
supply current
4.75
73
70
5.00
83
80
5.25
93
90
V
mA
mA
PEN = 5 V
PEN = 0 V
Conversion stage
V
I(RFA)
V
I(RFB)
V
O(IOUT)
V
O(QOUT)
Quadrature generator
DC input voltage on pin RFA
DC input voltage on pin RFB
DC output voltage on pin IOUT
DC output voltage on pin QOUT
0.9
0.9
1.85
1.85
V
V
V
V
V
O(LOOUT)
V
O(LOOUTC)
Baseband stage
DC output voltage on pin LOOUT
DC output voltage on pin LOOUTC
4.0
4.0
V
V
V
I(IBBIN)
V
I(QBBIN)
V
O(IBBOUT)
V
O(QBBOUT)
DC input voltage on pin IBBIN
DC input voltage on pin QBBIN
DC output voltage on pin IBBOUT
DC output voltage on pin QBBOUT
2.5
2.5
2.5
2.5
V
V
V
V
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