參數(shù)資料
型號: TDA8512J
廠商: NXP SEMICONDUCTORS
元件分類: 音頻/視頻放大
英文描述: 26 W BTL and 2 x 13 W SE or 4 x 13 W SE power amplifier
中文描述: 13 W, 4 CHANNEL, AUDIO AMPLIFIER, PZFM17
封裝: PLASTIC, DIL-BENT-SIL, 17 PIN
文件頁數(shù): 17/24頁
文件大?。?/td> 165K
代理商: TDA8512J
2001 Nov 16
17
Philips Semiconductors
Preliminary specification
26 W BTL and 2
×
13 W SE or
4
×
13 W SE power amplifier
TDA8512J
handbook, halfpage
(W)
0
8
4
12
16
Po (W)
6
8
2
0
4
MGW445
(1)
(2)
Fig.17 Power dissipation as a function of output
power at V
P
= 15 V.
SE mode.
(1) R
L
= 2
.
(2) R
L
= 4
.
handbook, halfpage
(W)
5
10
15
20
VP (V)
6
10
8
2
0
4
MGW446
(1)
(2)
Fig.18 Power dissipation as a function of supply
voltage.
SE mode.
(1) R
L
= 2
.
(2) R
L
= 4
.
handbook, halfpage
BP
(dB)
MGW447
2
4
0
2
10
2
10
1
1
10
10
2
fi (kHz)
Fig.19 Power bandwidth as a function of
frequency; no bandpass applied.
SE mode.
V
P
= 15 V; R
L
= 2
.
P
o
= 8.5 W; THD = 0.5%.
handbook, halfpage
BP
(dB)
MGW448
2
4
0
2
10
2
10
1
1
10
10
2
fi (kHz)
Fig.20 Power bandwidth as a function of
frequency; no bandpass applied.
BTL mode.
V
P
= 15 V; R
L
= 4
.
P
o
= 17 W; THD = 0.5%.
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相關代理商/技術參數(shù)
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