參數(shù)資料
型號: TDK5100F
廠商: INFINEON TECHNOLOGIES AG
英文描述: 434 MHz ASK/FSK Transmitter in 10-pin Package
中文描述: 434兆赫詢價/ FSK發(fā)射器采用10引腳封裝
文件頁數(shù): 26/35頁
文件大?。?/td> 503K
代理商: TDK5100F
Applications
3 - 8
TDK 5100 F
Preliminary
Wireless Components
Target Specification, July 2003
3.6
Application Hints on the Power-Amplifier
The power amplifier operates in a high efficient class C mode. This mode is
characterized by a pulsed operation of the power amplifier transistor at a current
flow angle of
θ
<<
π
. A frequency selective network at the amplifier output
passes the fundamental frequency component of the pulse spectrum of the
collector current to the load. The load and its resonance transformation to the
collector of the power amplifier can be generalized by the equivalent circuit of
Figure 3-4. The tank circuit L//C//RL in parallel to the output impedance of the
transistor should be in resonance at the operating frequency of the transmitter.
Equivalent_power_wmf.
Figure 3-4
Equivalent power amplifier tank circuit
The optimum load at the collector of the power amplifier for
critical
operation
under idealized conditions at resonance is:
The theoretical value of R
LC
for an RF output power of P
o
= 5 dBm (3.16 mW) is:
Critical
operation is characterized by the RF peak voltage swing at the
collector of the PA transistor to just reach the supply voltage V
S
.
The high degree of efficiency under
critical
operating conditions can be
explained by the low power losses at the transistor. During the conducting
phase of the transistor, its collector voltage is very small. This way the power
loss of the transistor, equal to i
*u
CE
, is minimized. This is particularly true for
small current flow angles of
θ
<<
π.
In practice the RF-saturation voltage of the PA transistor and other parasitics
reduce the
critical
R
LC
.
V
S
R
L
C
L
O
S
LC
P
V
*
R
2
2
=
=
=
1423
00316
.
*
2
3
2
LC
R
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