參數(shù)資料
型號(hào): TE28F020-90
廠商: INTEL CORP
元件分類: DRAM
英文描述: Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVS06; No. of Contacts:8; Connector Shell Size:13; Connecting Termination:Crimp; Circular Shell Style:Straight Plug; Body Style:Straight
中文描述: 256K X 8 FLASH 12V PROM, 90 ns, PDSO32
封裝: 0.310 X 0.720 INCH, TSOP-32
文件頁(yè)數(shù): 28/38頁(yè)
文件大小: 878K
代理商: TE28F020-90
28F020
E
28
4.8
AC Characteristics
—Read Only Operations—Commercial and Extended
Temperature Products
Versions
28F020-90
(4)
28F020-120
(4)
28F020-150
(4)
Symbol
Characteristics
Notes
Min
Max
Min
Max
Min
Max
Unit
t
AVAV
/t
RC
Read Cycle Time
90
120
150
ns
t
ELQV
/
t
CE
>
Chip Enable Access
Time
90
120
150
ns
t
AVQV
/
t
ACC
Address Access
Time
90
120
150
ns
t
GLQV
/
t
OE
Output Enable
Access Time
35
50
50
ns
t
ELQ
X
/
t
LZ
Chip Enable to
Output in Low Z
2, 3
0
0
0
ns
t
EHQZ
Chip Disable to
Output in High Z
2
45
55
55
ns
t
GLQX
/
t
OLZ
Output Enable to
Output in Low Z
2, 3
0
0
0
ns
t
GHQZ
/
t
DF
Output Disable to
Output in High Z
2
30
30
30
ns
t
OH
Output Hold from
Address, CE#, or
OE# Change
1, 2
0
0
0
ns
t
WHGL
Write Recovery Time
before Read
6
6
6
μs
NOTES:
1.
2.
3.
4.
Whichever occurs first.
Sampled, not 100% tested.
Guaranteed by design.
See High Speed AC Testing Input/Output Waveform(Figure 8) and High Speed AC Testing Load Circuit(Figure 9) for
testing characteristics.
See Testing Input/Output Waveform(Figure 6) and AC Testing Load Circuit(Figure 7) for testing characteristics.
5.
相關(guān)PDF資料
PDF描述
TE28F020-120 28F020 2048K (256K X 8) CMOS FLASH MEMORY
TE28F020-150 28F020 2048K (256K X 8) CMOS FLASH MEMORY
TE28F128P30T85 Intel StrataFlash Embedded Memory
TE28F128P30xxx Intel StrataFlash Embedded Memory
TE28F256P30B85 Intel StrataFlash Embedded Memory
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