參數(shù)資料
型號: TEA1095
廠商: NXP SEMICONDUCTORS
元件分類: 無繩電話/電話
英文描述: Voice switched speakerphone IC
中文描述: SPEAKER PHONE CIRCUIT, PDIP24
封裝: 0.600 INCH, PLASTIC, SOT-101, DIP-24
文件頁數(shù): 13/28頁
文件大?。?/td> 184K
代理商: TEA1095
1997 Nov 25
13
Philips Semiconductors
Product specification
Voice switched speakerphone IC
TEA1095
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
CHARACTERISTICS
V
BB
= 5 V; V
GND
= 0 V; f = 1 kHz; T
amb
= 25
°
C; MUTETX = LOW; MUTERX = LOW; PD = LOW; R
VOL
= 0
; measured
in test circuit of Fig.11; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
n(max)
maximum voltage on all pins;
except pins V
BB
and RXIN
maximum voltage on pin RXIN
maximum voltage on pin V
BB
IC storage temperature
operating ambient temperature
V
GND
0.4
V
BB
+ 0.4
V
V
RIN(max)
V
BB(max)
T
stg
T
amb
V
GND
1.2
V
GND
0.4
40
25
V
BB
+ 0.4
12.0
+125
+75
V
V
°
C
°
C
SYMBOL
PARAMETER
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient in free air
TEA1095
TEA1095T
TEA1095TS
50
75
104
K/W
K/W
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Supply (V
BB
, PD and GND)
V
BB
I
BB
P
OWER
-
DOWN INPUT
PD
supply voltage
current consumption from pin V
BB
2.9
2.7
12.0
3.8
V
mA
V
IL
V
IH
I
PD
I
BB(PD)
LOW level input voltage
HIGH level input voltage
power-down input current
current consumption from pin V
BB
in power-down mode
V
GND
0.4
1.5
0.3
V
BB
+ 0.4
5
190
V
V
μ
A
μ
A
2.5
140
PD = HIGH
PD = HIGH
Transmit channel (TXIN, GATX, TXOUT, MUTETX and TXGND)
T
RANSMIT AMPLIFIER
Z
i
input impedance between
pins TXIN and TXGND
voltage gain from TXIN to TXOUT
in transmit mode
voltage gain adjustment with
R
GATX
voltage gain variation with
temperature referenced to 25
°
C
17
20
23
k
G
vtx
V
TXIN
= 1 mV (RMS);
R
GATX
= 30.1 k
15.5
dB
G
vtxr
15.5
+24.5
dB
G
vtxT
V
TXIN
= 1 mV (RMS);
T
amb
=
25 to +75
°
C
±
0.3
dB
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