參數(shù)資料
型號: TEA1095TS
廠商: NXP SEMICONDUCTORS
元件分類: 無繩電話/電話
英文描述: Voice switched speakerphone IC
中文描述: SPEAKER PHONE CIRCUIT, PDSO24
封裝: PLASTIC, SSOP-24
文件頁數(shù): 14/28頁
文件大小: 184K
代理商: TEA1095TS
1997 Nov 25
14
Philips Semiconductors
Product specification
Voice switched speakerphone IC
TEA1095
G
vtxf
voltage gain variation with
frequency referenced to 1 kHz
noise output voltage at
pin TXOUT
V
TXIN
= 1 mV (RMS);
f = 300 to 3400 Hz
pin TXIN connected to
TXGND through 200
in
series with 10
μ
F;
psophometrically
weighted (P53 curve)
±
0.3
dB
V
notx
100
dBmp
T
RANSMIT MUTE INPUT
MUTETX
V
IL
V
IH
I
MUTETX
G
vtxm
LOW level input voltage
HIGH level input voltage
input current
voltage gain reduction with
MUTETX active
V
GND
0.4
1.5
0.3
V
BB
+ 0.4
5
V
V
μ
A
dB
2.5
80
MUTETX = HIGH
MUTETX = HIGH
Receive channel (RXIN, GARX, RXOUT and MUTERX)
R
ECEIVE AMPLIFIER
Z
i
input impedance between pins
RXIN and GND
voltage gain from RXIN to
RXOUT in receive mode
voltage gain adjustment with
R
GARX
voltage gain variation with
temperature referenced to 25
°
C
voltage gain variation with
frequency referenced to 1 kHz
noise output voltage at pin
RXOUT (RMS value)
17
20
23
k
G
vrx
V
RXIN
= 20 mV (RMS);
R
GARX
= 16.5 k
6.5
dB
G
vrxr
20.5
+19.5
dB
G
vrxT
V
RXIN
= 20 mV (RMS);
T
amb
=
25 to +75
°
C
V
RXIN
= 20 mV (RMS);
f
i
= 300 to 3400 Hz
input RXIN short-circuited
through 200
in series
with 10
μ
F;
psophometrically
weighted (P53 curve)
when total attenuation
does not exceed the
switching range
±
0.3
dB
G
vrxf
±
0.3
dB
V
norx(rms)
20
μ
V
G
vrxv
voltage gain variation referenced
to
R
VOL
= 950
3
dB
R
ECEIVE MUTE INPUT
MUTERX
V
IL
V
IH
I
MUTERX
LOW level input voltage
HIGH level input voltage
input current
V
GND
0.4
1.5
0.3
V
BB
+ 0.4
5
V
V
μ
A
2.5
MUTERX = HIGH
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
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