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參數(shù)資料
| 型號(hào)： | TEA1523AJM |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 穩(wěn)壓器 |
| 英文描述： | CAP .33UF 16V PEN FILM 2416 5% |
| 中文描述： | SWITCHING REGULATOR, 200 kHz SWITCHING FREQ-MAX, PZFM9 |
| 封裝： | 12 X 11 MM, POWER, PLASTIC, SOT-523-1, SIP-9 |
| 文件頁(yè)數(shù)： | 11/20頁(yè) |
| 文件大小： | 114K |
| 代理商： | TEA1523AJM |
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2000 Sep 08
11
Philips Semiconductors
Product specification
STARplug
TM
TEA152x family
Duty factor regulator (pin REG)
V
REG
G
V(erroramp)
V
REG(clamp)
Valley switching (not implemented in TEA152xAJM versions)
input voltage
voltage gain of error amplifier
clamping voltage at pin REG
2.4
2.5
20
2.6
7.5
V
dB
V
I
REG
= 6 mA
dV/dt
valley
f
valley
dV/dt for valley recognition
ringing frequency for valley
switching
delay from valley recognition to
switch-on
102
200
550
102
800
V/
μ
s
kHz
N
×
V
o
= 100 V
t
d(valley-swon)
150
ns
Current and short circuit winding protection
V
source(max)
t
d(propagation)
delay from detecting V
SRC(max)
to
switch-off
V
swp
short circuit winding protection
voltage
t
leb
blanking time for current and short
circuit winding protection
maximum source voltage
dV/dt = 0.1 V/
μ
s
dV/dt = 0.5 V/
μ
s
0.47
0.50
160
0.53
185
V
ns
dV/dt = 0.5 V/
μ
s
0.7
0.75
0.8
V
250
350
450
ns
Output stage (FET)
I
L(drain)
V
(BR)drain
R
DS(on)
drain leakage current
drain breakdown voltage
drain-source on-state resistance
of TEA1520
V
drain
= 650 V
T
j
> 0
°
C
T
j
= 25
°
C; I
source
=
0.06 A
T
j
= 100
°
C; I
source
=
0.06 A
T
j
= 25
°
C; I
source
=
0.125 A
T
j
= 100
°
C; I
source
=
0.125 A
T
j
= 25
°
C; I
source
=
0.25 A
T
j
= 100
°
C; I
source
=
0.25 A
T
j
= 25
°
C; I
source
=
0.5 A
T
j
= 100
°
C; I
source
=
0.5 A
T
j
= 25
°
C; I
source
=
1.0 A
T
j
= 100
°
C; I
source
=
1.0 A
V
i
= 300 V; no external capacitor at
drain
650
48
68
24
34
12
17
6.5
9.0
3.4
4.8
75
125
55.2
78.2
27.6
39.1
13.8
19.6
7.5
10.0
3.9
5.5
μ
A
V
ns
drain-source on-state resistance
of TEA1521
drain-source on-state resistance
of TEA1522
drain-source on-state resistance
of TEA1523
drain-source on-state resistance
of TEA1524
t
drain(f)
drain fall time
Temperature protection
T
prot(max)
T
prot(hys)
maximum temperature threshold
hysteresis temperature
150
160
2
170
°
C
°
C
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
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