參數(shù)資料
型號: TEA5591
廠商: NXP SEMICONDUCTORS
元件分類: 接收器
英文描述: AM/FM radio receiver circuit
中文描述: AM/FM, AUDIO SINGLE CHIP RECEIVER, PDIP20
封裝: 0.300 INCH, PLASTIC, SOT-146-1, DIP-20
文件頁數(shù): 2/22頁
文件大?。?/td> 282K
代理商: TEA5591
June 1989
2
Philips Semiconductors
Product specification
AM/FM radio receiver circuit
TEA5591
GENERAL DESCRIPTION
The TEA5591 is an integrated radio circuit which is designed for use in portable receivers and clock radios. The IC is
also applicable to mains-fed AM an AM/FM receivers and car radio-receivers. The main advantage of this IC is its ability
to operate over a wide range of supply voltages without loss of performance. The AM circuit incorporates a balanced
mixer and a ‘one-pin’ oscillator, which operates in the 0.6 MHz to 30 MHz frequency range, with amplitude control. The
circuit also includes an IF amplifier, a detector and an AGC circuit which controls the IF amplifier and the mixer. The FM
circuit incorporates an RF amplifier, a balanced mixer and a ‘one-pin’ oscillator together with two AC coupled IF amplifiers
(with distributed selectivity), a quadrature demodulator for the ceramic filter and internal AFC.
Features
DC AM/FM switch facility
Three internal separate stabilizers to enable operation over a wide range of supply voltages (1.8 to 15 V)
All pins (except pin 9) are ESD protected.
QUICK REFERENCE DATA
PACKAGE OUTLINE
20-lead DIL; plastic (SOT146); SOT146-1; 1996 August 14.
PARAMETER
CONDITIONS
SYMBOL
MIN.
TYP.
MAX.
UNIT
Supply voltage (pin 8)
Supply current
AM part
FM part
Operating ambient temperature range
V
P
1.8
3.0
15
V
I
P
(AM)
I
P
(FM)
T
amb
15
14
17
19
23
+
60
mA
mA
°
C
AM performance
(pin 13)
m = 0.3
RF sensitivity
RF input voltage
RF input voltage
Signal plus noise-to-noise ratio
AF output voltage
Total harmonic distortion
V
o
= 10 mV
(S
+
N)/N = 26 dB
V
i
= 1 mV
V
i
V
i
(S
+
N)/N
V
o
THD
3.5
17
48
50
0.7
μ
V
μ
V
dB
mV
%
FM performance
(pin 1)
f = 22.5 kHz
RF sensitivity
RF input voltage
3 dB before limiting
Signal plus noise-to-noise ratio for:
RF input signal voltage (V
i
)
V
i
2.3
4.0
μ
V
V
i
= 3.0
μ
V
V
i
= 1 mV
V
i
= 100
μ
V
(S
+
N)/N
(S
+
N)/N
V
o
THD
23
75
26
60
90
0.8
dB
dB
mV
%
AF output voltage
Total harmonic distortion
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