參數(shù)資料
型號(hào)： TEA6330T-T
廠商： NXP SEMICONDUCTORS
元件分類： 音頻控制
英文描述： 2 CHANNEL(S), SOUND FADER CONTROL CIRCUIT, PDSO28
文件頁(yè)數(shù)： 16/19頁(yè)
文件大?。?/td> 147K
代理商： TEA6330T-T
January 1992
6
Philips Semiconductors
Preliminary specication
Sound fader control circuit
for car radios
TEA6330T
CHARACTERISTICS
VP = 8.5 V; load resistors at audio outputs 10 k, fi = 1 kHz (RS = 600 ), bass and treble in linear position, fader in off
position and Tamb = 25 °C; measurements taken in Fig.1 unless otherwise specied.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VP
supply voltage range (pin 18)
7
8.5
10
V
IP
supply current
26
mA
Vref
reference voltage (pin 20)
0.45 VP 0.5 VP
0.55 VP
V
VO
DC voltage at output (pins 7, 8, 13, 14)
0.5 VP
V
Measurements over all
Vi
maximum AF input level for THD = 2 %
Gv = 66 to 6 dB
at pins 2 and 19 (RMS value)
and VP = 8.1 V
2
V
Vo
maximum AF output level for THD = 2%
Gv = 4 to +20 dB
at pins 7, 8, 13, 14 (RMS value)
and VP = 8.1 V
1.1
V
Gv
maximum gain by volume setting
19
20
21
dB
B
frequency response
1 dB roll-off frequency
35 to
20000
Hz
α
CR
crosstalk attenuation
f = 250 to 10000 Hz
Gv = 0 dB
70
90
dB
THD
total harmonic distortion
f = 20 to 12500 Hz
Vi (RMS) = 50 mV
Gv = +20 dB
0.1
0.3
%
Vi (RMS) = 500 mV
Gv = 0 dB
0.05
0.2
%
Vi (RMS) = 1.6 V
Gv = 10 dB
0.2
0.5
%
RR
ripple rejection for VR < 200 mV RMS
Gv = 0 dB
f = 100 Hz
70
dB
f = 40 Hz to 3 kHz
60
dB
f = 3 to 12.5 kHz
50
dB
PN
noise power at output of a 25 W
powerstage with 26 dB gain
(only contribution of TEA6330T)
mute position
(V9 = 0)
10
nW
α
BUS
crosstalk attenuation between SDA, SCL
and signal output
Gv = 0 dB
110
dB
(20 log VBUS (p-p)/Vo RMS)
S/N(W)
weighted signal-to-noise ratio for
CCIR 468-2 quasi
peak for 6 W power
amplier
Vi = 50 mV RMS
Po = 50 mW
65
dB
Vi = 500 mV RMS
Po = 50 mW
67
dB
Vi = 50 mV RMS
Po = 1 W
65
72
dB
Vi = 500 mV RMS
Po = 1 W
71
78
dB
Vi = 50 mV RMS
Po = 6 W; Fig.9
72
dB
Vi = 500 mV RMS
Po = 6 W; Fig.9
86
dB
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