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參數(shù)資料
| 型號： | TF91320C |
| 廠商： | DYNEX SEMICONDUCTOR LTD |
| 元件分類： | 晶閘管 |
| 英文描述： | D52 - BACKSHELL ENVIRON EMI-RFI STRT MIL |
| 中文描述： | 1300 A, 2000 V, SCR |
| 封裝： | MU169, 4 PIN |
| 文件頁數(shù)： | 3/13頁 |
| 文件大?。?/td> | 242K |
| 代理商： | TF91320C |
TF913..C
3/13
DYNAMIC CHARACTERISTICS
V
TM
Parameter
Symbol
Conditions
Maximum on-state voltage
At 2000A peak, T
case
= 25
o
C
I
RRM
/I
DRM
Peak reverse and off-state current
At V
RRM
/V
DRM
, T
case
= 125
o
C
Gate source 20V, 20
t
r
≤
0.5
μ
s, T
j
= 125C
dV/dt
Maximum linear rate of rise of off-state voltage
Linear to 60% V
DRM
T
j
= 125
o
C, Gate open circuit
Min.
Max.
Units
-
2.15
V
-
60
mA
-
300
V/
μ
s
Repetitive 50Hz
-
500
A/
μ
s
Non-repetitive
-
800
A/
μ
s
Rate of rise of on-state current
dI/dt
V
T(TO)
Threshold voltage
At T
vj
= 125
o
C
r
T
On-state slope resistance
At T
vj
= 125
o
C
1.25
-
V
-
0.45
m
Delay time
t
gd
4*
μ
s
Total turn-on time
t
(ON)TOT
2*
-
μ
s
T
j
= 25C, I
T
= 50A,
V
D
= 300V, I
G
= 1A,
dI/dt = 50A/
μ
s, dI
G
/dt = 1A/
μ
s
*Typical value.
I
H
Holding current
T
j
= 25
o
C, I
TM
= 1A, V
D
= 12V
100*
-
mA
T
= 125C, I
T
= 250A, V
= 50V,
dV/dt = 20V/
μ
s (Linear to 60% V
DRM
),
dI
R
/dt = 50A/
μ
s, Gate open circuit
Turn-off time
t
q
50
-
μ
s
t
q
code: C
GATE TRIGGER CHARACTERISTICS AND RATINGS
V
DRM
= 12V, T
case
= 25
o
C, R
L
= 6
Conditions
Parameter
Symbol
V
GT
Gate trigger voltage
V
DRM
= 12V, T
case
= 25
o
C, R
L
= 6
I
GT
Gate trigger current
V
GD
Gate non-trigger voltage
At V
DRM
T
case
= 125
o
C, R
L
= 1k
-
3.0
V
-
200
mA
-
0.2
V
Typ.
Max.
Units
V
RGM
Peak reverse gate voltage
I
FGM
Peak forward gate current
Anode positive with respect to cathode
P
GM
Peak gate power
P
G(AV)
Mean gate power
-
5.0
V
-
10
A
-
50
W
-
3
W
I
L
Latching current
T
j
= 25
o
C, I
G
= 0.5A, V
D
= 12V
300*
-
mA
-
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