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參數(shù)資料
| 型號： | TG2216TU |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic |
| 中文描述： | 東芝線性砷化鎵GaAs單片集成電路 |
| 文件頁數(shù)： | 3/9頁 |
| 文件大?。?/td> | 209K |
| 代理商： | TG2216TU |
TG2216TU
2003-03-20
3
Pin Information
Pin
Symbol
Description
1
RF1
RF port. When V
C1
= Hi and V
C2
= Lo, this port is connected to RFcom. An external DC blocking
capacitor (C
1
) is required for internal DC bias blocking.
2
GND
GND port. The distance between this pin and ground pattern should be as short as possible for RF
performance.
3
RF2
RF port. When V
C1
= Lo and V
C2
= Hi, this port is connected to RFcom. An external DC blocking
capacitor (C
1
) is required for internal DC bias blocking.
4
V
C2
Control port. Switching operation is controlled by the voltage of this port. The bypass capacitor (C
2
)
is required.
5
RFcom
Common RF port. Switching this port to RF1 or RF2 is controlled by “V
C1
” and “V
C2
” voltage. An
external DC blocking capacitor (C
1
) is required for internal DC bias blocking.
6
V
C1
Control port. Switching operation is controlled by the voltage of this port. The bypass capacitor (C
2
)
is required.
Test Circuit 1
(RF Test Circuit)
The values of capacitors depends on the application frequency range and the board pattern layout.
This should be considered for Board design and external components.
Please refer to the Recommend External Parts Table below.
Reference External Parts
50 MHz to 300 MHz
300 MHz to 500 MHz
0.5 GHz to 2.5 GHz
Ｃ
1
1000 pF
100 pF
56 pF
Ｃ
2
100 pF
10 pF
10 pF
C
1
C
2
RF1
Top
view
V
C1
C
1
RF2
GND
C
1
RFcom
V
C2
C
2
C
1
: 56 pF
C
2
: 10 pF
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