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參數(shù)資料
| 型號： | TGA1071-EPU |
| 廠商： | TRIQUINT SEMICONDUCTOR INC |
| 元件分類： | 衰減器 |
| 英文描述： | 36 - 40 GHz Power Amplifier |
| 中文描述： | 36000 MHz - 40000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| 封裝： | 3.40 X 2.10 MM, DIE-6 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 307K |
| 代理商： | TGA1071-EPU |
TriQuint Semiconductor Texas : Phone (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
2
RECOMMENDED MAXIMUM RATINGS
Symbol
V
+
I
+
P
D
P
IN
T
CH
T
M
T
STG
Parameter
Positive Supply Voltage
Positive Supply Current
Power Dissipation
Input Continuous Wave Power
Operating Channel Temperature
Mounting Temperature (30 seconds)
Storage Temperature
Value
7 V
.4 A
2.8 W
20 dBm
150
°
C
320
°
C
-65
°
C to 150
°
C
Notes
3/
1/, 2/
1/
These ratings apply to each individual FET
2/
Junction operating temperature will directly affect the device mean time to failure
(MTTF). For maximum life it is recommended that junction temperatures be
maintained at the lowest possible levels.
3/
Total current for both stages
DC PROBE TESTS
(T
A
= 25
°
C
±
5
°
C)
Symbol
Idss
Parameter
Saturated Drain Current (info
only)
Pinch-off Voltage
Breakdown Voltage gate-source
Breakdown Voltage gate-drain
Minimum
140
Maximum
658
Value
mA
V
P1-5
BV
GS1
BV
GD1-5
-1.5
-30
-30
-0.5
-8
-8
V
V
V
Electrical Characteristics
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
ON-WAFER RF PROBE CHARACTERISTICS
(T
A
= 25
°
C
±
5
°
C)
Symbol
Parameter
Test Condition
Vd=5V, Id=120mA
Limit
Min Nom Max
15
Units
G
p
Small-signal
Power Gain
F = 36 to 40 GHz
F = 38 GHz
13
dB
dB
dB
dB
IRL
Input Return
Loss
Output Return
Loss
Output Power
F = 36 to 40 GHz
-
-10
-
ORL
F = 36 to 40 GHz
-
-10
-
dB
PWR
F = 36 to 40 GHz
22
-
dBm
Note: RF probe data is taken at 0.4 GHz steps
相關PDF資料 |
PDF描述 |
|---|---|
| TGA1073A | 26- 34 GHz Medium Power Amplifier |
| TGA1073A-SCC | 26- 34 GHz Medium Power Amplifier |
| TGA1073C | 36 - 40 GHz Power Amplifier |
| TGA1073C-SCC | 36 - 40 GHz Power Amplifier |
| TGA1073G | 19 - 27 GHz Medium Power Amplifier |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| TGA1073A | 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:26- 34 GHz Medium Power Amplifier |
| TGA1073AEPU | 制造商:TriQuint Semiconductor 功能描述: |
| TGA1073ASCC | 制造商:TriQuint Semiconductor 功能描述: |
| TGA1073A-SCC | 功能描述:射頻放大器 26-35GHz Ka Band MPA RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| TGA1073BEPU | 制造商:TriQuint Semiconductor 功能描述: |
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