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參數(shù)資料
| 型號： | TGA1319B |
| 廠商： | TRIQUINT SEMICONDUCTOR INC |
| 元件分類： | 衰減器 |
| 英文描述： | Ka Band Low Noise Amplifier |
| 中文描述： | 21000 MHz - 27000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封裝： | 2.237 X 1.144 MM, DIE-6 |
| 文件頁數(shù)： | 3/3頁 |
| 文件大?。?/td> | 405K |
| 代理商： | TGA1319B |
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
August 29, 2000
Reflow process assembly notes:
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AuSn (80/20) solder with limited exposure to temperatures at or above 300
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C
alloy station or conveyor furnace with reducing atmosphere
no fluxes should be utilized
coefficient of thermal expansion matching is critical for long-term reliability
storage in dry nitrogen atmosphere
Component placement and adhesive attachment assembly notes:
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vacuum pencils and/or vacuum collets preferred method of pick up
avoidance of air bridges during placement
force impact critical during auto placement
organic attachment can be used in low-power applications
curing should be done in a convection oven; proper exhaust is a safety concern
microwave or radiant curing should not be used because of differential heating
coefficient of thermal expansion matching is critical
Interconnect process assembly notes:
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thermosonic ball bonding is the preferred interconnect technique
force, time, and ultrasonics are critical parameters
aluminum wire should not be used
discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire
maximum stage temperature: 200
Γ
C
Assembly Process Notes
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TGA1319B
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TGA1319C | Ka Band Wideband LNA/Driver |
| TGA1342 | 2 -20 GHz Wideband AGC Amplifier |
| TGA1342-EPU | 2 -20 GHz Wideband AGC Amplifier |
| TGA2512 | X-Band Low Noise Amplifier |
| TGA2513-EPU | Wideband LNA with AGC |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TGA1319B-EPU | 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:Ka Band Low Noise Amplifier |
| TGA1319C | 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:Ka Band Wideband LNA/Driver |
| TGA1319C-EPU | 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:Ka Band Wideband LNA/Driver |
| TGA1328-SCC | 功能描述:射頻放大器 DC-18GHz 12.5GB/s Mod Driver RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| TGA1342 | 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:2 -20 GHz Wideband AGC Amplifier |
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