參數(shù)資料
型號: TGA2520
廠商: TRIQUINT SEMICONDUCTOR INC
元件分類: 衰減器
英文描述: 12-16 GHz High Linearity Amplifier
中文描述: 12000 MHz - 16000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
封裝: 0.098 X 0.055 INCH, 0.004 INCH HEIGHT, DIE-7
文件頁數(shù): 1/9頁
文件大?。?/td> 270K
代理商: TGA2520
1
TriQuint Semiconductor Texas www.triquint.com Phone : (972)994-8465 Fax: (972)994-8504 info-mmw@tqs.com
June
2006
Note: This device is early in the characterization process prior to finalizing all electrical test specifications. Specifications are subject to change
without notice.
Advance Product Information
Key Features and Performance
31 dBm Midband Pout
33 dB Nominal Gain
TOI > 40 dBm
0.5 μm pHEMT 3MI Technology
Bias Conditions: 6 V, 850mA
Chip dimensions: 2.5 x 1.4 x 0.1 mm
(98 x 55 x 4 mils)
Preliminary Measured Data
Bias Conditions: Vd=6 V Id=850 mA
Primary Applications
Point-to-Point Radio
VSAT
Ku Band Sat-Com
12-16 GHz High Linearity Amplifier
TGA2520
The TriQuint TGA2520 MMIC is an
extremely linear, high gain amplifier,
capable of 1 Watt output power at P1dB
for the frequency range of 12 – 16 GHz.
This performance makes this amplifier
ideally suited for Point to Point Radios
and current Ku-Band satellite ground
terminal applications. The TGA2520
utilizes TriQuint’s robust 0.5um power
pHEMT process coupled with 3 layer
Metal Inteconnect (3MI) technology. The
TGA2520 provides the high power
transmit function in an extremely compact
(< 3.5mm
2
) chip footprint.
The combination of a high-yield process,
electrical performance, and compact die
size is exactly what is required to support
the aggressive pricing targets required for
low-cost transmit modules. Each device
is 100% DC and RF tested on–wafer to
ensure performance compliance. The
device is available in chip form.
Product Description
-20
-15
-10
-5
0
5
10
15
20
25
30
35
40
12
13
14
15
16
Freq (GHz)
S
Gain
IRL
ORL
25
27
29
31
33
35
37
39
41
43
45
12
13
14
15
16
Freq (GHz)
T
P
TOI
P1dB
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