參數(shù)資料
型號(hào): TGA2602-SM
廠商: TRIQUINT SEMICONDUCTOR INC
元件分類(lèi): 衰減器
英文描述: 800 - 3000MHz High IP3 Dual LNA
中文描述: 800 MHz - 3000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
封裝: 2 X 2 MM, 0.90 MM HEIGHT, ROHS COMPLIANT, QFN-6
文件頁(yè)數(shù): 2/21頁(yè)
文件大小: 308K
代理商: TGA2602-SM
Advance Product Information
April 11, 2006
TGA2602-SM
2
TriQuint Semiconductor Texas Phone: (972) 994-8465 Fax: (972) 994-8504 Email: info-mmw@tqs.com Web: www.triquint.com
TABLE I
MAXIMUM RATINGS
Symbol
V
+
V
-
I
+
| I
-
|
P
IN
P
D
T
CH
T
M
Parameter
Value
5 V
-1V to 0.5V
100 mA
5 mA
TBD
TBD
150
0
C
260
0
C
Notes
1/ 2/
1/
1/ 2/
1/
1/ 2/
1/ 2/ 3/
4/
Positive Supply Voltage
Negative Supply Voltage
Positive Supply Current (per channel)
Negative Supply Current (per channel)
Input Continuous Wave Power
Power Dissipation
Operating Channel Temperature
Mounting Temperature
(10 Seconds)
Storage Temperature
T
STG
-65 to 150
0
C
1/ These ratings represent the maximum operable values for this device
2/
Combinations of supply voltage, supply current, input power, and output power shall
not exceed P
D
at a package base temperature of 80
°
C
3/ When operated at this bias condition with a baseplate temperature of 80
°
C, the
MTTF is reduced
4/ Junction operating temperature will directly affect the device median time to failure
(MTTF). For maximum life, it is recommended that junction temperatures be
maintained at the lowest possible levels.
TABLE II
THERMAL INFORMATION
Test Conditions
Parameter
T
CH
(
°
C)
R
Θ
JC
(
°
C/W)
MTTF
(hrs)
R
Θ
JC
Thermal Resistance
(Channel to Backside of
Package)
V
D
= 3.5V
I
D
= 100mA
P
DISS
= 0.35W
T
BASE
= 70
°
C
97
48.6
1E+6
Note: Thermal transfer is conducted through the bottom of the TGA2602-SM
package into the motherboard.
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