- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄373633 > TGA4517-EPU (TRIQUINT SEMICONDUCTOR INC) Ka-Band Power Amplifier PDF資料下載
參數(shù)資料
| 型號： | TGA4517-EPU |
| 廠商： | TRIQUINT SEMICONDUCTOR INC |
| 元件分類： | 衰減器 |
| 英文描述： | Ka-Band Power Amplifier |
| 中文描述： | 31000 MHz - 37000 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER |
| 封裝： | 0.171 X 0.154 INCH, 0.002 INCH HEIGHT, DIE-18 |
| 文件頁數(shù)： | 10/10頁 |
| 文件大?。?/td> | 147K |
| 代理商： | TGA4517-EPU |
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
June 4, 2004
TGA4517-EPU
10
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
Assembly Process Notes
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Reflow process assembly notes:
Use AuSn (80/20) solder with limited exposure to temperatures at or above 300
0
C (30 seconds max).
An alloy station or conveyor furnace with reducing atmosphere should be used.
No fluxes should be utilized.
Coefficient of thermal expansion matching is critical for long-term reliability.
Devices must be stored in a dry nitrogen atmosphere.
Component placement and adhesive attachment assembly notes:
Vacuum pencils and/or vacuum collets are the preferred method of pick up.
Air bridges must be avoided during placement.
The force impact is critical during auto placement.
Organic attachment can be used in low-power applications.
Curing should be done in a convection oven; proper exhaust is a safety concern.
Microwave or radiant curing should not be used because of differential heating.
Coefficient of thermal expansion matching is critical.
Interconnect process assembly notes:
Thermosonic ball bonding is the preferred interconnect technique.
Force, time, and ultrasonics are critical parameters.
Aluminum wire should not be used.
Maximum stage temperature is 200
0
C.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TGA4517 | Ka-Band Power Amplifier |
| TGA4521 | 32 - 45 GHz Wide Band Driver Amplifier |
| TGA4522-EPU | 33 - 47 GHz Wide Band Driver Amplifier |
| TGA4522 | 33 - 47 GHz Wide Band Driver Amplifier |
| TGA4525-SM | K-Band Packaged Power Amplifier |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TGA4521 | 功能描述:射頻放大器 32 - 47GHz PA RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| TGA4522 | 功能描述:射頻放大器 33 - 47GHz PA Balanced RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| TGA4522-EPU | 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:33 - 47 GHz Wide Band Driver Amplifier |
| TGA4525-SM | 功能描述:射頻放大器 17-27 GHz 29dBm HPA RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| TGA4530 | 功能描述:射頻放大器 17-20 GHz 40dBm TOI HPA RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。