參數(shù)資料
型號(hào): TGA4802-EPU
廠商: TRIQUINT SEMICONDUCTOR INC
元件分類(lèi): 衰減器
英文描述: 12.5Gb/s Modulator Driver Amplifier
中文描述: 0 MHz - 25000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
封裝: DIE-16
文件頁(yè)數(shù): 2/10頁(yè)
文件大小: 175K
代理商: TGA4802-EPU
2
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
July 22, 2004
TGA4802EPU
TABLE I
MAXIMUM RATINGS 1/
SYMBOL
PARAMETER
VALUE
NOTES
Vd
POSITIVE SUPPLY VOLTAGE
Drain Voltage at RF output
7 V
2/
Id
POSITIVE SUPPLY CURRENT
Drain Current
200 mA
2/
P
d
POWER DISSIPATION
1.4 W
2/, 3/
Vg
Ig
NEGATIVE GATE
Voltage
Gate Current
0 V to –3 V
5 mA
Vctrl
Ictrl
CONTROL GATE
Voltage
Gate Current
Vd/2 to –3 V
5 mA
4/
P
IN
RF INPUT
Sinusoidal Continuous Wave Power
23 dBm
150
0
C
320
0
C
T
CH
OPERATING CHANNEL TEMPERATURE
5/, 6/
T
M
MOUNTING TEMPERATURE
(30 SECONDS)
T
STG
STORAGE TEMPERATURE
-65 to 150
0
C
Notes:
1/ These ratings represent the maximum operable values for the device.
2/ Assure the combination of Vd and Id does not exceed maximum power dissipation rating.
3/ Assure Vctrl never exceeds Vd during bias on and off sequences, and normal operation.
4/ When operated at this bias condition with a base plate temperature of 70
0
C, the median life is reduced.
5/ Junction operating temperature will directly affect the device median time to failure (MTTF). For
maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels.
6/ These ratings apply to each individual FET.
TABLE II
DC PROBE TEST
(TA = 25
°
C, nominal)
LIMITS
NOTES
SYMBOL
MIN
11
11
MAX
30
30
UNITS
1/
1/
|V
BVGS
|
|V
BVGD
|
V
V
Notes:
1 V
BVGS
and V
BVDS
are negative.
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