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參數(shù)資料
| 型號(hào)： | TGA4817-EPU |
| 廠商： | TRIQUINT SEMICONDUCTOR INC |
| 元件分類： | 通信及網(wǎng)絡(luò) |
| 英文描述： | 10Gb/s Wide Dynamic Range Differential TIA |
| 中文描述： | SPECIALTY TELECOM CIRCUIT, U |
| 封裝： | 1.20 X 1.20 MM, 0.10 MM HEIGHT, DIE-8 |
| 文件頁數(shù)： | 2/9頁 |
| 文件大?。?/td> | 415K |
| 代理商： | TGA4817-EPU |
Advance Product Information
September 27, 2004
2
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com
TGA4817-EPU
TABLE I
MAXIMUM RATINGS
Symbol
V
+
I
+
Parameter 1/
Value
Notes
Positive Supply Voltage
5.5 V
2/
Positive Supply Current (Quiescent)
80 mA
2/
P
IN
P
D
T
CH
T
M
Input Continuous Wave Power
14.5 dBm
2/
Power Dissipation
0.44 W
117
°
C
320
°
C
2/
Operating Channel Temperature
4/ 5/
Mounting Temperature
(30 Seconds)
T
STG
Storage Temperature
-65 to 117
°
C
1/
These ratings represent the maximum operable values for this device.
2/
Current is defined under no RF drive conditions. Combinations of supply voltage,
supply current, input power, and output power shall not exceed P
D
.
3/
When operated at this power dissipation with a base plate temperature of 70
°
C, the
median life is 1 E+6 hours.
4/
These ratings apply to each individual FET.
5/
Junction operating temperature will directly affect the device median time to failure (T
M
).
For maximum life, it is recommended that junction temperatures be maintained at the
lowest possible levels.
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