參數(shù)資料
型號: TGA4830-EPU
廠商: TRIQUINT SEMICONDUCTOR INC
元件分類: 衰減器
英文描述: Wideband Low Noise Amplifier
中文描述: 0 MHz - 45000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
封裝: 0.070 X 0.039 INCH, 0.004 INCH HEIGHT, DIE
文件頁數(shù): 9/9頁
文件大?。?/td> 722K
代理商: TGA4830-EPU
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
June 16, 2004
TGA4830-EPU
9
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Reflow process assembly notes:
Use AuSn (80/20) solder with limited exposure to temperatures at or above 300
°
C.
(30 seconds maximum)
An alloy station or conveyor furnace with reducing atmosphere should be used.
No fluxes should be utilized.
Coefficient of thermal expansion matching is critical for long-term reliability.
Devices must be stored in a dry nitrogen atmosphere.
Component placement and adhesive attachment assembly notes:
Vacuum pencils and/or vacuum collets are the preferred method of pick up.
Air bridges must be avoided during placement.
The force impact is critical during auto placement.
Organic attachment can be used in low-power applications.
Curing should be done in a convection oven; proper exhaust is a safety concern.
Microwave or radiant curing should not be used because of differential heating.
Coefficient of thermal expansion matching is critical.
Interconnect process assembly notes:
Thermosonic ball bonding is the preferred interconnect technique.
Force, time, and ultrasonics are critical parameters.
Aluminum wire should not be used.
Maximum stage temperature is 200
°
C.
Assembly Process Notes
相關(guān)PDF資料
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