參數(shù)資料
型號(hào)： TGA4915-EPU-CP
廠(chǎng)商： TRIQUINT SEMICONDUCTOR INC
元件分類(lèi)： 衰減器
英文描述： 7 W Ka Band Packaged Power Amplifier
中文描述： 28000 MHz - 31000 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER
文件頁(yè)數(shù)： 3/8頁(yè)
文件大?。?/td> 143K
代理商： TGA4915-EPU-CP
Advance Product Information
June 30, 2004
3
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
TGA4915-EPU-CP
TABLE II
RF CHARACTERIZATION TABLE
(T
A
= 25
q
C, Nominal)
(Vd = 6 V, Id = 4.2 A)
SYMBOL
PARAMETER
TEST
CONDITION
TYPICAL
UNITS
Gain
Small Signal Gain
F = 26-31 GHz
22
dB
IRL
Input Return Loss
F = 26-31 GHz
15
dB
ORL
Output Return Loss
F = 26-31 GHz
15
dB
PWR
Output Power @ P1dB
F = 26-31 GHz
38
dBm
TABLE III
THERMAL INFORMATION*
Parameter
Test Conditions
T
CH
(
q
C)
R
4
JC
(
q
C/W)
T
M
(hrs)
R
Θ
JC
Thermal Resistance
(Channel to Backside of
Package)
V
D
= 6 V
I
D
= 4.2 A
P
DISS
= 25.2 W
128
2.3
7.4 E+6
Note: Carrier at 70
°
C baseplate temperature. Worst case is at saturated output power when DC
power consumption rises to 44 W with 7 W RF power delivered to the load. Power dissipated is
37 W and the temperature rise in the channel is 85
°
C. Baseplate temperature must be reduced
to 65
°
C to remain below the 150
°
C maximum channel temperature.
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