參數(shù)資料
型號: TGA8035-SCC
廠商: TRIQUINT SEMICONDUCTOR INC
元件分類: 衰減器
英文描述: Gain Block Amplifier
中文描述: 6000 MHz - 18000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
封裝: CHIP
文件頁數(shù): 5/7頁
文件大?。?/td> 222K
代理商: TGA8035-SCC
TGA8035-SCC
5
DC CHARACTERISTICS
RF CHARACTERISTICS
PARAMETER
TEST CONDITIONS
V
DS
= 0.5 V to 3.5 V,
V
GS
= 0
V
DS
= 0.5 V to 3.5 V,
V
GS
= 0
MIN
36
MAX
108
UNIT
mA
I
DSS1
Total zero–gate–voltage drain current at saturation
for FET1 *
I
DSS2
Total zero–gate–voltage drain current at saturation
for FET2 **
36
108
mA
PARAMETER
TEST CONDITIONS
f = 6 to 18 GHz
f = 6 to 18 GHz
f = 6 to 18 GHz
f = 6 to 18 GHz
f = 6 to 18 GHz
TYP
UNIT
dB
dBm
dB
G
P
SWR(in)
SWR(out)
P
1dB
NF
Small–signal power gain
Input standing–wave ratio
Output standing–wave ratio
Output power at 1–dB gain compression
Noise figure
13
2.2:1
2.2:1
12.5
5
T
A
= 25°C
* V
DS1
for I
DSS1
is drain voltage between 0.5 V and 3.5 V at which drain current is highest at DC autoprobe.
** V
DS2
for I
DSS2
is drain voltage between 0.5 V and 3.5 V at which drain current is highest at DC autoprobe.
V
D1,
V
D2
= 5 V, V
G1
= - 1 V, V
G2
= - 1 V, T
A
= 25°C
PARAMETER
TEST CONDITIONS
TEST CONDITIONS
FET
152.5
184.7
192.8
MMIC*
76.3
92.4
96.4
UNIT
25°C Base, 80°C Channel**
85°C Base, 151°C Channel**
100°C Base, 169°C Channel**
R
JC
Thermal resistance,
channel–to–backside
I
D
=72 mA, V
D
=5V
°C/W
* MMIC thermal resistance is the peak FET temperature rise divided by the total MMIC dissipated power (.72 W).
**Hottest Gate Channel (Center of either FET).
EQUIVALENT
SCHEMATIC
V
G2
V
D1
FET2
300 m
300 m
FET 1
V
D2
V
G1
RF Input
RF Output
THERMAL INFORMATION
TriQuint Semiconductor, Inc.
Texas Facilities
(972) 995-8465
www.triquint.com
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