參數(shù)資料
型號: TGA8286-EPU
廠商: TRIQUINT SEMICONDUCTOR INC
元件分類: 衰減器
英文描述: 8 - 10.5 GHz Power Amplifier
中文描述: RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER
文件頁數(shù): 3/7頁
文件大?。?/td> 546K
代理商: TGA8286-EPU
TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com
Product Data Sheet
TGA8286-EPU
3
ABSOLUTE
MAXIMUM
RATINGS
Positive supply voltage, V+…………………………………………………………………………………12 V
Positive supply voltage range with respect to negative supply voltage, V+ - V-………………………0 V to 13 V
Negative supply voltage range, V-…………………………………………………………………………-5 V to 0 V
Drain supply voltage, V
D
……………………………………………………………………………………11 V
Drain supply current, I
D
………………………………………………………………………………………3.6 mA
Positive supply current, I+…..………………………………………………………………………………902 mA
Power dissipation, P
D
, at (or below) 25
o
C base-plate temperature *……………………………………28.8 W
Input continuous wave power, P
IN
…………………………………………………………………………30 dBm
Operating Channel temperature, T
CH
**……………………………………………………………………150
o
C
Mounting temperature (30 sec.), T
M
…………………………………………………………………………20
o
C
Storage temperature range, T
STG
……………………………………………………………………………65 to 150
o
C
Ratings over operating channel temperature range, T
CH
(unless otherwise noted).
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.
These are stress ratings only, and functional operation of the device at these or any other conditions beyond
those indicated under "RF Characteristics" is not implied. Exposure to absolute maximum rated conditions
for extended periods may affect device reliability.
* For operation above 25
o
C base-plate temperature, derate linearly at the rate of 6.0 mW/
o
C.
** Operating channel temperature directly affects the device MTTF. For maximum life, it is recommended that
channel temperature be maintained at the lowest possible level. These ratings apply to each individual FET.
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