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參數(shù)資料
| 型號(hào)： | TGA8344-SCC |
| 廠商： | TRIQUINT SEMICONDUCTOR INC |
| 元件分類： | 衰減器 |
| 英文描述： | 2 - 18 GHz Low Noise Amplifier |
| 中文描述： | 2000 MHz - 18000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封裝： | 3.99 X 3.81 MM, 0.10 MM HEIGHT, CHIP |
| 文件頁(yè)數(shù)： | 7/11頁(yè) |
| 文件大小： | 506K |
| 代理商： | TGA8344-SCC |
Product Data Sheet
TGA8344-SCC
7
TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com
Table IV
AUTOPROBE FET PARAMETER MEASUREMENT CONDITIONS
FET Parameters
Test Conditions
I
DSS
:
Maximum drain current (I
DS
) with gate voltage
(V
GS
) at zero volts.
V
GS
= 0.0 V, drain voltage (V
DS
) is swept from 0.5 V
up to a maximum of 3.5 V in search of the maximum
value of I
DS
; voltage for I
DSS
is recorded as VDSP.
For all material types, V
DS
is swept between 0.5 V
and VDSP in search of the maximum value of I
ds
.
This maximum I
DS
is recorded as IDS1. For
Intermediate and Power material, IDS1 is measured
at V
GS
= VG1 = -0.5 V. For Low Noise, HFET and
pHEMT material, V
GS
= VG1 = -0.25 V. For
LNBECOLC, use V
GS
= VG1 = -0.10 V.
V
DS
fixed at 2.0 V, V
GS
is swept to bring I
DS
to
0.5 mA/mm.
G
m
:
Transconductance;
I
DSS
IDS1
(
VG1
)
V
P
:
Pinch-Off Voltage; V
GS
for I
DS
= 0.5 mA/mm of
gate width.
V
BVGD
:
Breakdown Voltage, Gate-to-Drain; gate-to-
drain breakdown current (I
BD
) = 1.0 mA/mm
of gate width.
Drain fixed at ground, source not connected
(floating), 1.0 mA/mm forced into gate, gate-to-drain
voltage (V
GD
) measured is V
BDGD
and recorded as
BVGD; this cannot be measured if there are other
DC connections between gate-drain, gate-source or
drain-source.
V
BVGS
:
Breakdown Voltage, Gate-to-Source; gate-to-
source breakdown current (I
BS
) = 1.0 mA/mm
of gate width.
Source fixed at ground, drain not connected
(floating), 1.0 mA/mm forced into gate, gate-to-
source voltage (V
GS
) measured is V
BDGS
and recorded
as BVGS; this cannot be measured if there are other
DC connections between gate-drain, gate-source or
drain-source.
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|---|---|
| TGA8349 | 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:Gain Block Amplifier |
| TGA8349-SCC | 功能描述:射頻放大器 DC-14GHz LNA AGC RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測(cè)試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| TGA8399B | 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:6-13 GHz Low Noise Amplifier |
| TGA8399B-EPU | 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:6-13 GHz Low Noise Amplifier |
| TGA8399B-SCC | 功能描述:射頻放大器 6-13GHz LNA Self Biased RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測(cè)試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
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