- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄373634 > TGA8399B-SCC (TRIQUINT SEMICONDUCTOR INC) 6-13 GHz Low Noise Amplifier PDF資料下載
參數(shù)資料
| 型號(hào)： | TGA8399B-SCC |
| 廠商： | TRIQUINT SEMICONDUCTOR INC |
| 元件分類： | 衰減器 |
| 英文描述： | 6-13 GHz Low Noise Amplifier |
| 中文描述： | 6000 MHz - 13000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封裝： | 3.10 X 2.40 MM, 0.15 HEIGHT, ROHS COMPLIANT, DIE-20 |
| 文件頁數(shù)： | 8/8頁 |
| 文件大小： | 217K |
| 代理商： | TGA8399B-SCC |
TriQuint Semiconductor Texas : Phone (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
Product Data Sheet
October 14, 2005
TGA8399B-SCC
8
Recommended Assembly Layout
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Reflow process assembly notes:
Use AuSn (80/20) solder with limited exposure to temperatures at or above 300
°
C.
An alloy station or conveyor furnace with reducing atmosphere should be used.
No fluxes should be utilized.
Coefficient of thermal expansion matching is critical for long-term reliability.
Devices must be stored in a dry nitrogen atmosphere.
Component placement and adhesive attachment assembly notes:
Vacuum pencils and/or vacuum collets are the preferred method of pick up.
Air bridges must be avoided during placement.
The force impact is critical during auto placement.
Organic attachment can be used in low-power applications.
Curing should be done in a convection oven; proper exhaust is a safety concern.
Microwave or radiant curing should not be used because of differential heating.
Coefficient of thermal expansion matching is critical.
Interconnect process assembly notes:
Thermosonic ball bonding is the preferred interconnect technique.
Force, time, and ultrasonics are critical parameters.
Aluminum wire should not be used.
Discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire.
Maximum stage temperature is 200
°
C.
Assembly Process Notes
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TGA8399B | 6-13 GHz Low Noise Amplifier |
| TGA8399B-EPU | 6-13 GHz Low Noise Amplifier |
| TGA8399C-EPU | Wideband Driver Amplifier |
| TGA8399C | Wideband Driver Amplifier |
| TGA8622 | 2 - 20 GHz Gain Block Amplifier |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TGA8399C | 功能描述:射頻放大器 8-18GHz Driver Amp RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測(cè)試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| TGA8399C-EPU | 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:Wideband Driver Amplifier |
| TGA8622 | 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:2 - 20 GHz Gain Block Amplifier |
| TGA8622-SCC | 功能描述:射頻放大器 2.0-20GHz Gain Block AGC RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測(cè)試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| TGA8652 | 制造商:TriQuint Semiconductor 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。