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參數(shù)資料
| 型號(hào)： | TGA9083 |
| 廠商： | TriQuint Semiconductor,Inc. |
| 英文描述： | Power Amplifier |
| 中文描述： | 功率放大器 |
| 文件頁(yè)數(shù)： | 1/9頁(yè) |
| 文件大小： | 262K |
| 代理商： | TGA9083 |
9083
TGA9083-EEU
Power Amplifier
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6.5 to 11.5-GHz Frequency Range
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5-Watt Output Power at 7V , 6-W at 8V, 8-W at 9 Volt Drain Bias
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19-dB Typical Small Signal Gain
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40% Power Added Efficiency at 7V, 35% PAE at 9 Volt Drain Bias
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12-dB Typical Input Return Loss, 9-dB Typical Output Return Loss
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On-Chip Active Gate Bias Circuit Option Simplifies Biasing
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4, 521 x 3,048 x 0,100 mm (0.178 x 0.120 x 0.004 in.)
The TriQuint TGA9083 -EEU is a monolithic power amplifier which operates from 6.5 to
11.5 GHz. This device is currently classified as an Engineering Evaluation Unit. This t wo stage power
amplifier partially consists of a 2.5-mm pHEMT driving a 11.36-mm pHEMT at the output. The
TGA9083-EEU is capable of providing 8 Watts of output power with 35% PAE when biased at 9 Volts.
Typical 7 Volts operation provides 5 Watts of output power with a power-added efficiency of 40
percent. Typical small signal gain is 19-dB. In balanced configuration, 12 Watts of output power is
achievable with 40% PAE.
The TGA9083-EEU is fabricated using TI’s 0.25um T-gate power pHEMT process. This device offers
either standard gate biasing or an on-chip active gate bias circuit which simplifies gate biasing. The
active gate bias (AGB) circuit requires a -5 V supply. This amplifier's output power and high efficiency
over 6.5 to 11.5 GHz make it a viable power amp solution in applications such as point-to-point radio ,
phased-array radar, and telecommunications.
Bond pad and backside metallization is gold plated for compa tibility with eutectic alloy attachment
methods as well as with thermocompression and thermosonic wire-bonding processes.
The TGA9083-EEU is supplied in chip form and is readily assembled using automated equipment.
Ground is provided to the circuitry through vias to the backside metallization.
PHOTO ENLARGEMENT
DESCRIPTION
O R , I N C .
T R I Q U I N T
S E M I C O N D U C T
TriQuint Semiconductor, Inc.
Texas Facilities
(972) 995-8465
www.triquint.com
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| TGA9088A-SCC | 17-21 GHz Medium Power Amplifier |
| TGA9088A | 17-21 GHz Intermediate Power Amplifier |
| TGA9088A-EPU | 17-21 GHz Intermediate Power Amplifier |
| TGA9092-SCC | 6 - 18 GHz High Power Amplifier |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TGA9083-EEU | 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:Power Amplifier |
| TGA9083-SCC | 功能描述:射頻放大器 6.5-11.5GHz High Power Amp RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測(cè)試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| TGA9088A | 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:17-21 GHz Intermediate Power Amplifier |
| TGA9088A-EPU | 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:17-21 GHz Intermediate Power Amplifier |
| TGA9088A-SCC | 功能描述:射頻放大器 17-21GHz K Band MPA self biased RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測(cè)試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
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