參數(shù)資料
型號(hào): TGA9092-EPU
廠商: TRIQUINT SEMICONDUCTOR INC
元件分類: 衰減器
英文描述: Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVS06; No. of Contacts:11; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Straight Plug; Body Style:Straight
中文描述: RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER
封裝: CHIP
文件頁數(shù): 1/10頁
文件大?。?/td> 291K
代理商: TGA9092-EPU
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TriQuint Semiconductor Texas: Phone (972)994 8465 Fax (972)994 8504 Web: www.triquint.com/mmw
Product Data Sheet
January 10, 2005
6 - 18 GHz High Power Amplifier TGA9092-SCC
Key Features and Performance
Dual Channel Power Amplifier
0.25um pHEMT Technology
6-18 GHz Frequency Range
2.8 W/Channel Midband Pout
5.6 W Pout Combined
24 dB Nominal Gain
Balanced In/Out for Low VSWR
8V @ 1.2A per Channel Bias
Primary Applications
X-Ku band High Power
VSAT
Typical Measured Small Signal Gain
Typical Measured Pout (RF Probe)
Product Description
The TriQuint TGA9092-SCC is a dual channel, three-
stage wide band HPA MMIC designed using
TriQuint’s
proven 0.25
μ
m Power pHEMT process to support a
variety of high performance applications including
military EW programs, VSAT, and other applications
requiring wideband high power performance.
Each amplifier channel consists of one 1200
μ
m input
device driving a 2400
μ
m intermediate stage which
drives a 4800 um output stage.
The TGA9092-SCC provides a nominal 34 dBm of
output power at 2dB gain compression across the 6-18
GHz range per channel . Power combined, nominal
output power of 36.5 dBm can be expected with low
loss external couplers. Typical per channel small
signal gain is 24 dB. Typical single-ended Input/Output
RL is 6-8 dB across the band.
The TGA9092-SCC is 100% DC and RF tested on-
wafer to ensure performance compliance. The device
is available in chip form.
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Frequency (GHz)
G
Chip Dimensions 5.739 mm x 4.318 mm x 0.1016 mm
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Frequency (GHz)
P
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