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參數(shù)資料
| 型號： | TGA9092 |
| 廠商： | TriQuint Semiconductor,Inc. |
| 英文描述： | 6 - 18 GHz High Power Amplifier |
| 中文描述： | 6 - 18 GHz的高功率放大器 |
| 文件頁數(shù)： | 3/10頁 |
| 文件大?。?/td> | 291K |
| 代理商： | TGA9092 |
3
TriQuint Semiconductor Texas: Phone (972)994 8465 Fax (972)994 8504 Web: www.triquint.com/mmw
Product Data Sheet
January 10, 2005
TGA9092-SCC
TABLE II
DC PROBE TEST
(TA = 25
°
C
±
5
°
C)
Symbol
Parameter
Minimum
Maximum
Unit
Imax
(Q1)
Maximum Current
400
800
mA
Gm
(Q1)
Transconductance
200
600
mS
V
P
Pinch-off Voltage
-1.5
-0.5
V
BVGS
Breakdown Voltage Gate-
Source
Breakdown Voltage Gate-
Drain
-30
-13
V
BVGD
-30
-13
V
TABLE III
AUTOPROBE FET PARAMETER MEASUREMENT CONDITONS
FET Parameters
(
Test Conditions
G
m
:
Transconductance;
I
DSS
IDS 1
)
VG1
For all material types, V
DS
is swept between 0.5 V
and VDSP in search of the maximum value of I
ds
.
This maximum I
DS
is recorded as IDS1. For
Intermediate and Power material, IDS1 is measured
at V
GS
= VG1 = -0.5 V. For Low Noise, HFET and
pHEMT material, V
GS
= VG1 = -0.25 V. For
LNBECOLC, use V
GS
= VG1 = -0.10 V.
V
DS
fixed at 2.0 V, V
GS
is swept to bring I
DS
to
0.5 mA/mm.
V
P
:
Pinch-Off Voltage; V
GS
for I
DS
= 0.5 mA/mm of
gate width.
V
BVGD
:
Breakdown Voltage, Gate-to-Drain; gate-to-
drain breakdown current (I
BD
) = 1.0 mA/mm
of gate width.
Drain fixed at ground, source not connected
(floating), 1.0 mA/mm forced into gate, gate-to-drain
voltage (V
GD
) measured is V
BDGD
and recorded as
BVGD; this cannot be measured if there are other
DC connections between gate-drain, gate-source or
drain-source.
V
BVGS
:
Breakdown Voltage, Gate-to-Source; gate-to-
source breakdown current (I
BS
) = 1.0 mA/mm
of gate width.
Source fixed at ground, drain not connected
(floating), 1.0 mA/mm forced into gate, gate-to-
source voltage (V
GS
) measured is V
BDGS
and recorded
as BVGS; this cannot be measured if there are other
DC connections between gate-drain, gate-source or
drain-source.
I
MAX
:
Maximum I
DS
.
Positive voltage is applied to the gate to saturate the
device. V
DS
is stepped between 0.5 V up to a
maximum of 3.5 V, searching for the maximum
value of I
DS
.
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|---|---|
| TGA9092-EPU | 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:6 - 18 GHz High Power Amplifier |
| TGA9092-SCC | 功能描述:射頻放大器 6.0-18GHz Power Amp RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
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