參數(shù)資料
型號(hào): TGC1439A
廠商: TriQuint Semiconductor,Inc.
英文描述: 18 - 20 GHz 5-Bit Phase Shifter
中文描述: 18 - 20 GHz的5位移相器
文件頁數(shù): 2/5頁
文件大?。?/td> 927K
代理商: TGC1439A
TriQuint Semiconductor Texas : (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
2
Advance Product Information
May 3, 2000
RECOMMENDED MAXIMUM RATINGS
Symbol
V
-
I
+
P
D
P
IN
T
CH
T
M
T
STG
Parameter
Control Voltage
Control Current
Power Dissipation
Input Continuous Wave Power
Operating Channel Temperature
Mounting Temperature (30 seconds)
Storage Temperature
Value
-8 V
1 mA
0.1 W
20 dBm
150
°
C
320
°
C
-65
°
C to 150
°
C
Notes
3/
1/, 2/
1/
These ratings apply to each individual FET
2/
Junction operating temperature will directly affect the device mean time to failure
(MTTF). For maximum life it is recommended that junction temperatures be
maintained at the lowest possible levels.
3/
Total current for the entire MMIC
Electrical Characteristics
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
ON-WAFER RF PROBE CHARACTERISTICS
(T
A
= 25
°
C
±
5
°
C)
Symbol
Parameter
Test Condition
Vctnl=0V / -2.5V
F = 18, 19, 20 GHz
States 0 and 31
F = 18, 19, 20 GHz
States 0 and 31
F = 18, 19, 20 GHz
States 0 and 31
F = 18, 19, 20 GHz
State 31
Limit
Min Nom Max
-5.5
-4.6
Units
IL
Insertion Loss
-4.0
dB
IRL
Input Return
Loss
Output Return
Loss
Phase Shift
-16
-11
dB
ORL
-14
-11
dB
PS
342
344
350
deg
0
200
400
600
800
1000
1200
-5.0 -4.9 -4.8 -4.7 -4.6 -4.5 -4.4 -4.3 -4.2 -4.1 -4.0
19 GHz Reference State Insertion Loss (dB)
N
TGC1439A
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