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參數(shù)資料
| 型號： | TGF2021-02 |
| 廠商： | TRIQUINT SEMICONDUCTOR INC |
| 元件分類： | 衰減器 |
| 英文描述： | DC - 12 GHz Discrete power pHEMT |
| 中文描述： | 0 MHz - 12000 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER |
| 封裝： | 0.57 X 0. 79 MM, 0.10 MM HEIGHT, ROHS COMPLIANT, CHIP-4 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 131K |
| 代理商： | TGF2021-02 |
Advance Product Information
September 19, 2005
TGF2021-02
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
3
TABLE III
RF CHARACTERIZATION TABLE
1/
(T
A
= 25
°
C, Nominal)
SYMBOL
PARAMETER
Vd = 10V
Idq = 150mA
Vd = 12V
Idq = 150mA
UNITS
Power Tuned:
Psat
PAE
Gain
Rp 2/
Cp 2/
Γ
L
3/,4/
Saturated Output Power
Power Added Efficiency
Power Gain
Parallel Resistance
Parallel Capacitance
Load Reflection coefficient
33.8
50
11
13.30
0.927
0.719
∠
164.9
34.5
48
11
15.97
0.953
0.720
∠
161.4
dBm
%
dB
pF
-
Efficiency Tuned:
Psat
PAE
Gain
Rp 2/
Cp 2/
Γ
L
3/, 4/
Saturated Output Power
Power Added Efficiency
Power Gain
Parallel Resistance
Parallel Capacitance
Load Reflection coefficient
33
59
11.5
24.50
1.077
0.778
∠
155.2
33.7
55
11
27.79
1.011
0.774
∠
152.7
dBm
%
dB
pF
-
TABLE IV
THERMAL INFORMATION
Parameter
Test Conditions
T
CH
(
o
C)
T
JC
(
q
C/W)
T
M
(HRS)
θ
JC
Thermal Resistance
(channel to backside of carrier)
Vd = 12 V
Idq = 150 mA
Pdiss = 1.8 W
148
43.3
1.2 E+6
Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo
Carrier at 70
°
C baseplate temperature.
1/ Values in this table are scaled from measurements taken from a 1mm unit pHEMT cell at 10 GHz
2/ Large signal equivalent pHEMT output network
3/ Optimum load impedance for maximum power or maximum PAE at 10 GHz
4 The reflection coefficients for this device have been calculated from the scaled large signal Rp & Cp.
The series resistance and inductance (Rd and Ld) shown in the Figure on page 4 is excluded
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| TGF2021-04 | 功能描述:射頻GaAs晶體管 DC-12GHz 4mm Pwr pHEMT (0.35um) RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| TGF2021-04-SD | 制造商:TriQuint Semiconductor 功能描述:RF POWER TRANSISTOR PHEMT 制造商:TriQuint Semiconductor 功能描述:Trans JFET N-CH 1.8A 4-Pin(3+Tab) SOT-89 Bulk |
| TGF2021-04-SD T/R | 功能描述:功率放大器 DC-4GHz 5Volts RoHS:否 制造商:TriQuint Semiconductor 封裝 / 箱體: 工作電源電壓:28 V 電源電流:2.5 A 工作溫度范圍: 封裝: |
| TGF2021-04-SDT | 制造商:TriQuint Semiconductor 功能描述:RF POWER TRANSISTOR PHEMT |
| TGF2021-04-SG | 功能描述:功率放大器 20-4000MHz Gain 12dB 12.5Volts Pwr 4 dBm RoHS:否 制造商:TriQuint Semiconductor 封裝 / 箱體: 工作電源電壓:28 V 電源電流:2.5 A 工作溫度范圍: 封裝: |
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