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參數(shù)資料
| 型號(hào)： | TGS2306-EPU |
| 廠商： | TRIQUINT SEMICONDUCTOR INC |
| 元件分類： | 衰減器 |
| 英文描述： | High Power DC - 18GHz SPDT FET Switch |
| 中文描述： | 0 MHz - 18000 MHz RF/MICROWAVE SGL POLE DOUBLE THROW SWITCH |
| 封裝： | 0.0330 X 0.0440 INCH, 0.004 INCH HEIGHT, DIE-7 |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大?。?/td> | 308K |
| 代理商： | TGS2306-EPU |
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
November 9, 2004
1
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
High Power DC - 18GHz SPDT FET Switch TGS2306-EPU
Key Features and Performance
DC - 18 GHz Frequency Range
29 dBm Input P1dB @ V
C
= -5V
> 30 dB Isolation
<1 nsec switching speed
Control Voltage Application from
Either Side of MMIC
-3V or -5V Control Voltage
0.5μm pHEMT 3MI Technology
Chip Dimensions:
0.83 x 1.11 x 0.10 mm
(0.033 x 0.044 x 0.004 inches)
Preliminary Measured Performance
V
C1
= 0V; V
C2
= -5V
-10
-8
-6
-4
-2
0
0
2
4
6
8
10
12
14
16
18
20
Frequency (GHz)
I
-40
-35
-30
-25
-20
-15
-10
-5
0
5
10
I
S21
S11
S22
S13
Desription
The TriQuint TGS2306-EPU is a GaAs
single-pole, double-throw (SPDT) FET
monolithic switch designed to operate
over the DC to 18GHz frequency range.
This switch not only maintains a high
isolation loss and a low insertion loss
across a wide bandwidth, but also has
very low power consumption and high
power handling of 29dBm or greater
input P1dB at V
C
= 5V. These
advantages, along with the small size of
the chip, make the TGS2306-EPU ideal
for use in high-speed radar and
communication applications.
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