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參數(shù)資料
| 型號： | TH74KB22B.VWOSPGS |
| 廠商： | ATMEL CORP |
| 元件分類： | 模擬信號調(diào)理 |
| 英文描述： | SPECIALTY ANALOG CIRCUIT, CQCC84 |
| 封裝： | WINDOWED, CERAMIC, J LEAD PACKAGE-84 |
| 文件頁數(shù)： | 14/20頁 |
| 文件大?。?/td> | 1116K |
| 代理商： | TH74KB22B.VWOSPGS |
ABSOLUTE MAXIMUM RATINGS
Supply voltages (compare to Vss, at any pin)
0 to +20V
Transient voltages (compare to Vss, at any pin)
0 to +25V
DC current (at any pin),
10mA
Except
- thermoelectric cooler pins
6A
except
- temperature sensor
+/-3mA
Operating temperature (temperature variation limited to 6°C/min)
-40 to +85°C
Storage temperature (temperature variation limited to 6°C/min)
-40 to +85°C
Electrostatic discharge sensitivity, MIL-STD-883 method 3015
device Class 1
Stresses above those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent devices failure. Functionality at
or above these limits is not implied. Exposure to maximum ratings for extended periods may affect device reliability.
To avoid any performance degradation,the device must be handled with grounded bracelet and stored in the conductive
packing used for shipment.
TABLE 1 - ELECTRO-OPTICAL CHARACTERISTICS
15°C internal operating temperature, 3ms integration time, typical voltage input (otherwise specified).
Parameter
Symbol
TH 7422B
Unit
Remarks
Min.
Typ.
Max.
Dark voltage signal
mean
isolated pixels
(photodiode dark current)
VD
(ID)
10
0.6
100
mV
pA
See Fig. 6
See note (1)
Noise in darkness
(rms)
mean
isolated pixels
σVD
200
1
V
mV
Absolute photo response
mean
non uniformity
non linearity over 1.5V range
R
PRNU
33
1
+/-10
Vcm/J
%
See Fig. 3-4-5
Spectral response
Cut-off wavelength
Temperature shift
lc
d
λc/dT
1.66
1.68
1.1
1.73
m
nm/°C
At 50% R(
l) max
Modulation transfer function
along array
MTF
0.55
0.68
0.73
At 19.2 lp/mm
See note (2)
Output saturation voltage
Vsat
2.5
V
Depends on preload
level. See Fig. 7
Noise equivalent power at
λ=1.65m
NEP
0.4
40
2
fW
nWcm-2
BW=1Hz
BW=167Hz
Specific detectivity at
λ=1.65m
D*
8.1012
1.5.1012
cmHz1/2W-1
BW=1Hz
BW=167Hz
Electron to voltage conversion factor
Quantum efficiency
Fc
QE
0.26
0.8
V/e
e/ph
See Fig. 5
Image grade
(number of blemishes)
J
K
O
E
1
5
10
NA
See note (3)
Electrical sample
Note : 1 Already taken into account in mean VD (VD =IdTIFc ; TI=Integration time ; q = 1.6 10-19 C)
q
Note : 2 “Maximum value” is the theoretical value computed using the corresponding diode size
Note : 3 a pixel is considered as a blemish if :
- its dark voltage is higher than isolated pixel max value
or
- its noise is higher than isolated pixel noise max value
or
- its PRNU is higher than +/- 10 %
3/20
TH7422B
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