參數(shù)資料
型號(hào)： THNCF192MBAI
廠商： Toshiba Corporation
英文描述： The THNCFxxxMBA/BAI series CompactFlash card is a flash technology based with ATA interface flash memory card.
中文描述： 在THNCFxxxMBA /白系列CF卡是閃存技術(shù)，ATA接口的閃存卡的。
文件頁數(shù)： 35/48頁
文件大?。?/td> 526K
代理商： THNCF192MBAI
THNCFxxxMBA/BAI Series
2002-10-20 35/48
Preliminary
DC CHARACTERISTICS
(V
CC
=
3.3 V
±
0.3V
, V
CC
=
5 V
±
0.5V
)
Ta
=
0
°
C
~
70
°
C for THNCFxxxMBA (Commercial grade)
Ta
=
-40
°
C
~
85
°
C for THNCFxxxMBAI (Industrial grade)
Input Characteristics
Type
SYMBOL
PARAMETER
MIN
MAX
TYP
UNIT
CONDITION
V
IH
Input High Voltage CMOS
(5V Tolerance)
2.0
2.0
V
CC
=
3.3 V
V
CC
=
5 V
V
CC
=
3.3 V
V
CC
=
5 V
V
CC
=
3.3 V
V
CC
=
5 V
V
CC
=
3.3 V
V
CC
=
5 V
V
CC
=
3.3 V
V
CC
=
5 V
V
CC
=
3.3 V
V
CC
=
5 V
V
CC
=
3.3 V
V
CC
=
5 V
V
CC
=
3.3 V
V
CC
=
5 V
1
V
IL
Input Low Voltage CMOS
(5V Tolerance)
1.0
1.0
V
IH
Input High Voltage
(3.3V : CMOS 5V: TTL)
2.0
2.0
2
V
IL
Input Low Voltage CMOS
(3.3V : CMOS 5V: TTL)
1.0
0.8
V
T+
Input High Voltage CMOS with Schmitt trigger
(5V Tolerance)
2.5
2.5
2.1
2.1
3
V
T-
Input Low Voltage CMOS with Schmitt trigger
(5V Tolerance)
0.9
0.9
1.2
1.2
V
T+
Input High Voltage with Schmitt trigger
(3.3V : CMOS 5V: TTL)
2.3
2.0
2.1
1.8
4
V
T-
Input Low Voltage with Schmitt trigger
(3.3V : CMOS 5V: TTL)
1.0
0.8
1.2
1.1
V
Output Drive Characteristics
Type
SYMBOL
PARAMETER
MIN
MAX
TYP
UNIT
CONDITION
V
OH
V
OL
Output High Voltage
V
CC
0.8
1
Output Low Voltage
Gnd + 0.4
V
I
OH
=
4mA
I
OL
=
4mA
SYMBOL
PARAMETER
MIN
MAX
TYP.
UNIT
TEST CONDITIONS
I
LI
Input leakage current
1
μ
A
I
LO
Output leakage current
1
μ
A
V
OUT
=
high
impedance
I
PU
Pull-up current (Resistivity)
43 (75)
μ
A (k
)
V
FORCE
=
3.3V
I
PD
Pull-down current (Resistivity)
48 / (206)
μ
A (k
)
V
FORCE
=
0V
I
CCS
Sleep mode current
1.5
2.0
1.0
1.2
mA
V
CC
=
3.3V
V
CC
=
5V
Operating current @ 3.3V
Write operation
Read operation
38
30
mA
V
CC
=
3.3V operation
I
CCO
Operating current @ 5V
Write operation
Read operation
43
35
mA
V
CC
=
5V operation
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