參數(shù)資料
型號(hào): THS4502IDGKDT
廠商: Texas Instruments, Inc.
元件分類: 運(yùn)動(dòng)控制電子
英文描述: WIDEBAND, LOW-DISTORTION FULLY DIFFERENTIAL AMPLIFIERS
中文描述: 寬帶,低失真全差動(dòng)放大器
文件頁數(shù): 2/40頁
文件大?。?/td> 609K
代理商: THS4502IDGKDT
THS4502
THS4503
SLOS352D
APRIL 2002
REVISED JANUARY 2004
www.ti.com
2
ABSOLUTE MAXIMUM RATINGS
over operating free-air temperature range unless otherwise noted
(1)
UNIT
16.5 V
±
V
S
150 mA
Supply voltage, V
S
Input voltage, V
I
Output current, I
O
(2)
Differential input voltage, V
ID
Continuous power dissipation See Dissipation Rating Table
4 V
Maximum junction temperature, T
J (3)
Maximum junction temperature, continuous
operation, long term reliability T
J (4)
150
°
C
125
°
C
Operating free-air
temperature range, T
A
C suffix
0
°
C to 70
°
C
40
°
C to 85
°
C
65
°
C to 150
°
C
I suffix
Storage temperature range, T
stg
Lead temperature
1,6 mm (1/16 inch) from case for 10
seconds
300
°
C
HBM
4000 V
ESD ratings:
CDM
1000 V
MM
100 V
(1)
Stresses above these ratings may cause permanent damage.
Exposure to absolute maximum conditions for extended periods
may degrade device reliability. These are stress ratings only, and
functional operation of the device at these or any other conditions
beyond those specified is not implied.
(2)
The THS450x may incorporate a PowerPAD on the underside of
the chip. This acts as a heatsink and must be connected to a
thermally dissipative plane for proper power dissipation. Failure
to do so may result in exceeding the maximum junction
temperature which could permanently damage the device. See TI
technical brief SLMA002 for more information about utilizing the
PowerPAD thermally enhanced package.
(3)
The absolute maximum temperature under any condition is
limited by the constraints of the silicon process.
(4)
The maximum junction temperature for continuous operation is
limited by package constraints. Operation above this temperature
may result in reduced reliability and/or lifetime of the device.
This integrated circuit can be damaged by ESD. Texas
Instruments recommends that all integrated circuits be
handled with appropriate precautions. Failure to observe
proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to
complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could
cause the device not to meet its published specifications.
PACKAGE DISSIPATION RATINGS
θ
JC
(
°
C/W)
θ
JA
(
°
C/W)
(1)
POWER RATING
(2)
T
A
25
°
C
1.02 W
PACKAGE
T
A
= 85
°
C
410 mW
D (8 pin)
38.3
97.5
DGN (8 pin)
4.7
58.4
1.71 W
685 mW
DGK (8 pin)
(1)
This data was taken using the JEDEC standard High-K test PCB.
(2)
Power rating is determined with a junction temperature of 125
°
C.
This is the point where distortion starts to substantially increase.
Thermal management of the final PCB should strive to keep the
junction temperature at or below 125
°
C for best performance and
long term reliability.
RECOMMENDED OPERATING CONDITIONS
54.2
260
385 mW
154 mW
MIN
NOM
MAX
±
7.5
UNIT
Dual supply
±
5
5
Supply voltage
Single supply
4.5
15
V
Operating free-
air temperature,
TA
C suffix
0
70
°
C
I suffix
40
85
PACKAGE/ORDERING INFORMATION
ORDERABLE PACKAGE AND NUMBER
PLASTIC MSOP
(1)
PowerPAD
TEMPERATURE
PLASTIC
SMALL OUTLINE
(D)
PLASTIC MSOP
(1)
(DGN)
SYMBOL
BCG
(DGK)
SYMBOL
ATX
THS4502CD
THS4502CDGN
THS4502CDGK
0
°
C to 70
°
C
THS4503CD
THS4503CDGN
BCK
THS4503CDGK
ATY
THS4502ID
THS4502IDGN
BCI
THS4502IDGK
ASX
40
°
C to 85
°
C
THS4503ID
THS4503IDGN
BCL
THS4503IDGK
ASY
(1)
All packages are available taped and reeled. The R suffix standard quantity is 2500. The T suffix standard quantity is 250 (e.g., THS4502DT).
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