參數(shù)資料
型號(hào): THS7372IPWR
廠商: TEXAS INSTRUMENTS INC
元件分類: 音頻/視頻放大
英文描述: 4 CHANNEL, VIDEO AMPLIFIER, PDSO14
封裝: GREEN, PLASTIC, TSSOP-14
文件頁數(shù): 12/49頁
文件大小: 1768K
代理商: THS7372IPWR
SBOS578
– AUGUST 2011
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
PACKAGE/ORDERING INFORMATION(1)(2)
PACKAGE
TRANSPORT
ECO STATUS(2)
PRODUCT
PACKAGE-LEAD
DESIGNATOR
MARKING
MEDIA, QUANTITY
THS7372IPW
Rails, 90
TSSOP-14
PW
THS7372
Pb-Free, Green
THS7372IPWR
Tape and Reel, 2000
(1)
For the most current package and ordering information, see the Package Option Addendum at the end of this document, or visit the
device product folder at www.ti.com.
(2)
These packages conform to Lead (Pb)-free and green manufacturing specifications. Additional details including specific material content
can be accessed at www.ti.com/leadfree.
GREEN: TI defines Green to mean Lead (Pb)-Free and in addition, uses less package materials that do not contain halogens, including
bromine (Br), or antimony (Sb) above 0.1% of total product weight. N/A: Not yet available Lead (Pb)-Free; for estimated conversion
dates, go to www.ti.com/leadfree. Pb-FREE: TI defines Lead (Pb)-Free to mean RoHS compatible, including a lead concentration that
does not exceed 0.1% of total product weight, and, if designed to be soldered, suitable for use in specified lead-free soldering
processes.
ABSOLUTE MAXIMUM RATINGS
(1)
Over operating free-air temperature range, unless otherwise noted.
THS7372
UNIT
Supply voltage, VS+ to GND
5.5
V
Input voltage, VI
–0.4 to VS+
V
Output current, IO
±90
mA
Continuous power dissipation
See Thermal Information Table
Maximum junction temperature, any condition(2), TJ
+150
°C
Maximum junction temperature, continuous operation, long-term reliability(3), TJ
+125
°C
Storage temperature range, TSTG
–60 to +150
°C
Human body model (HBM)
4000
V
ESD rating:
Charge device model (CDM)
1000
V
Machine model (MM)
200
V
(1)
Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may
degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond
those specified is not implied.
(2)
The absolute maximum junction temperature under any condition is limited by the constraints of the silicon process.
(3)
The absolute maximum junction temperature for continuous operation is limited by the package constraints. Operation above this
temperature may result in reduced reliability and/or lifetime of the device.
RECOMMENDED OPERATING CONDITIONS
MIN
NOM
MAX
UNIT
Supply voltage, VS+
2.7
5
V
Ambient temperature, TA
–40
+85
°C
2
Copyright
2011, Texas Instruments Incorporated
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