參數(shù)資料
型號: TIM5359-35SL
廠商: Toshiba Corporation
英文描述: MICROWAVE POWER GaAs FET
中文描述: 微波功率GaAs場效應(yīng)管
文件頁數(shù): 4/4頁
文件大?。?/td> 462K
代理商: TIM5359-35SL
4
T IM5359-35S L
Power Dissipation(PT) vs. Case Temperature(Tc)
Tc(
°
C )
IM3 vs. Power Characteristics
VDS=10V
IDS
@
8.5A
freq.=5.9GHz
f=5MHz
Pout(dBm) @Single carrier level
0
P
120
100
80
60
40
20
30
-10
-20
-30
-40
-50
-60
I
40
80
120
160
200
32
34
36
38
40
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TIM5359-4 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:POWER GAAS FET
TIM5359-45SL 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR,GAAS FET INTERNALLY MATCHED,5GHZ,125W - Trays
TIM5359-4SL 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR,GAAS FET INTERNALLY MATCHED,5GHZ,23W - Trays
TIM5359-4UL 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR,GAAS FET INTERNALLY MATCHED,5GHZ,23W - Trays
TIM5359-60SL 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:MICROWAVE POWER GaAs FET