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參數資料
| 型號： | TIM5964-12UL |
| 廠商： | Toshiba Corporation |
| 英文描述： | MICROWAVE POWER GaAs FET |
| 中文描述： | 微波功率GaAs場效應管 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 57K |
| 代理商： | TIM5964-12UL |
MICROWAVE POWER GaAs FET
MICROWAVE SEMICONDUCTOR
TIM4450-16UL
TECHNICAL DATA
FEATURES
n
HIGH POWER
P1dB=42.5dBm at 4.4GHz to 5.0GHz
n
HIGH GAIN
G1dB=10.0dB at 4.4GHz to 5.0GHz
RF PERFORMANCE SPECIFICATIONS ( Ta= 25
°
C )
n
BROAD BAND INTERNALLY MATCHED FET
n
HERMETICALLY SEALED PACKAGE
CHARACTERISTICS
SYMBOL
P
1dB
CONDITIONS
UNIT
MIN. TYP. MAX.
Output Power at 1dB Gain
Compression Point
dBm
41.5
42.5
Power Gain at 1dB Gain
Compression Point
Drain Current
G
1dB
dB
9.0
10.0
I
DS1
G
η
add
IM
3
A
-44
4.4
36
5.0
±
0.6
Gain Flatness
Power Added Efficiency
dB
%
V
DS
= 10
V
f
= 4.4 to 5.0GHz
3rd Order Intermodulation
Distortion
dBc
-47
Drain Current
Channel Temperature Rise
I
DS2
Tch
Two-Tone Test
Po= 31.5dBm
(Single Carrier Level)
A
°
C
4.4
5.0
80
(VDS X IDS + Pin – P1dB)
X Rth(c-c)
Recommended gate resistance(Rg) : Rg= 100
W
MAX.)
ELECTRICAL CHARACTERISTICS ( Ta= 25
°
C )
CHARACTERISTICS
Transconductance
SYMBOL
gm
CONDITIONS
V
DS
=
3V
I
DS
= 6.0A
V
GSoff
V
DS
=
3V
I
DS
= 60mA
I
DSS
V
DS
=
3V
V
GS
= 0V
V
GSO
I
GS
= -200
μ
A
UNIT
mS
MIN. TYP. MAX.
3600
Pinch-off Voltage
V
-1.0
-2.5
-4.0
Saturated Drain Current
A
10.5
Gate-Source Breakdown
Voltage
Thermal Resistance
V
-5
R
th(c-c)
Channel to Case
°
C/W
1.5
1.8
u
The information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
Rev. J un. 2006
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相關代理商/技術參數 |
參數描述 |
|---|---|
| TIM5964-12UL_09 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:HIGH POWER P1dB=41.5dBm at 5.9GHz to 6.4GHz |
| TIM5964-16EL | 制造商:Toshiba America Electronic Components 功能描述:TIM5964-16EL - Bulk |
| TIM5964-16SL | 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR,GAAS FET INTERNALLY MATCHED - 6GHZ, 75W - Trays |
| TIM5964-16SL-422 | 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR,GAAS FET INTERNALLY MATCHED - 6GHZ, 75W - Trays |
| TIM5964-16UL | 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR,GAAS FET INTERNALLY MATCHED - 6GHZ, 75W - Trays |
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