參數(shù)資料
型號： TIM6472-45SL
廠商： Toshiba Corporation
英文描述： MICROWAVE POWER GaAs FET
中文描述： 微波功率GaAs場效應(yīng)管
文件頁數(shù)： 2/4頁
文件大?。?/td> 463K
代理商： TIM6472-45SL
2
T IM6472-45S L
ABSOLUTE MAXIMUM RATINGS ( Ta= 25
°
C )
CHARACTERISTICS
SYMBOL
V
DS
V
GS
I
DS
P
T
T
ch
T
stg
UNIT
RATING
Drain-Source Voltage
V
15
Gate-Source Voltage
V
-5
Drain Current
Total Power Dissipation (Tc= 25
°
C)
Channel Temperature
Storage Temperature
PACKAGE OUTLINE (2-16G1B)
A
W
°
C
°
C
20
125
175
-65 to +175
Unit in mm
(1) Gate
(2) Source
(3) Drain
HANDLING PRECAUTIONS FOR PACKAGE MODEL
Soldering iron should be grounded and the operating time should not exceed 10 seconds
at 260
°
C.
5
0
0.7
±
0.15
2
±
0
8
±
0
1
±
0
0
+
-
0
2
2
1
±
0
2
±
0
20.4
±
0.3
24.5 MAX.
4
–
C1.0
(1)
(2)
(2)
(3)
16.4 MAX.
相關(guān)PDF資料
PDF描述
TIM6472-4UL MICROWAVE POWER GaAs FET
TIM7179-45SL MICROWAVE POWER GaAs FET
TIM7785-16UL MICROWAVE POWER GaAs FET
TIM7785-16 MICROWAVE POWER GAAS FET
TIM7785-60SL MICROWAVE POWER GaAs FET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TIM6472-4SL 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR,GAAS FET INTERNALLY MATCHED, 6GHZ, 23W - Trays
TIM6472-4UL 制造商:Toshiba America Electronic Components 功能描述: 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR,GAAS FET INTERNALLY MATCHED, 6GHZ, 23W - Trays
TIM6472-4UL_09 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:HIGH POWER P1dB=36.5dBm at 6.4GHz to 7.2GHz
TIM6472-60SL 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR,GAAS FET INTERNALLY MATCHED, 6GHZ, 60W - Trays
TIM6472-6UL 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR,GAAS FET INTERNALLY MATCHED, 6GHZ, 32.5W - Trays
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