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參數(shù)資料
| 型號(hào)： | TIP127 |
| 廠商： | KEC Holdings |
| 元件分類(lèi)： | 馬達(dá)/運(yùn)動(dòng)控制及驅(qū)動(dòng)器 |
| 英文描述： | EPITAXIAL PLANAR PNP TRANSISTOR (SWITCHING HAMMER DRIVER, PULSE MOTOR DRIVER) |
| 中文描述： | 外延平面PNP晶體管（開(kāi)關(guān)錘子驅(qū)動(dòng)器，步進(jìn)電機(jī)驅(qū)動(dòng)） |
| 文件頁(yè)數(shù)： | 2/2頁(yè) |
| 文件大小： | 28K |
| 代理商： | TIP127 |
Continental Device India Limited
Data Sheet
Page 2 of 3
Collector current
IC
max.
5.0
A
Collector current (peak)
ICM
max.
8
A
Base current
IB
max.
120
mA
Total power dissipation up to TC = 25°C Ptot
max.
65
W
Derate above 25°C
max
0.52
W/°C
Total power dissipation up to TA = 25°C Ptot
max.
2
W
Derate above 25°C
max
0.016
W/°C
Junction temperature
Tj
max.
150
°C
Storage temperature
Tstg
–65 to +150
C
THERMAL RESISTANCE
From junction to ambient
Rth j–a
62.5
°C/W
From junction to case
Rth j–c
1.92
°C/W
CHARACTERISTICS
Tamb = 25°C unless otherwise specified
120 121 122
125 126 127
Collector cutoff current
IE = 0; VCB = 60 V
ICBO
max. 0.2
–
mA
IE = 0; VCB = 80 V
ICBO
max. –
0.2
–
mA
IE = 0; VCB = 100 V
ICBO
max. –
–
0.2 mA
IB = 0; VCE = 30V
ICEO
max. 0.5
–
mA
IB = 0; VCE = 40V
ICEO
max. –
0.5
–
mA
IB = 0; VCE = 50V
ICEO
max. –
–
0.5 mA
Emitter cut-off current
IC = 0; VEB = 5 V
IEBO
max.
2.0
mA
Breakdown voltages
IC = 100 mA; IB = 0
VCEO(sus)*
min.
60
80
100 V
IC = 1 mA; IE = 0
VCBO
min.
60
80
100 V
IE = 1 mA; IC = 0
VEBO
min.
5.0
V
Saturation voltages
IC = 3.0 A; IB = 12 mA
VCEsat*
max.
2.0
V
IC = 5.0 A; IB = 20 mA
VCEsat*
max.
4.0
V
Base-emitter on voltage
IC = 3A; VCE = 3V
VBE(on)*
max.
2.5
V
D.C. current gain
IC = 0.5A; VCE = 3V
hFE*
min.
1.0
IC = 3A; VCE = 3V
min.
1.0
Small signal current gain
IC = 3A; VCE = 4V; f = 1 MHz
|hfe|
min.
4.0
Output capacitance at f = 0.1 MHz
IE = 0; VCB = 10V
PNP
Co
max.
300
pF
NPN
Co
max.
200
pF
* Pulse test: pulse width
≤ 300 s; duty cycle ≤ 2%.
TIP120, TIP121, TIP122
TIP125, TIP126, TIP127
http://www.bocasemi.com
page: 2
Boca Semiconductor Corp.
BSC
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