參數(shù)資料
型號: TIP29C
廠商: 意法半導體
英文描述: COMPLEMENTARY SILICON POWER TRANSISTORS
中文描述: 互補性的芯片功率晶體管
文件頁數(shù): 4/4頁
文件大?。?/td> 51K
代理商: TIP29C
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TIP29A / TIP29C / TIP30A / TIP30C
4/4
相關(guān)PDF資料
PDF描述
TIP29C Mini size of Discrete semiconductor elements
TIP29C POWER TRANSISTORS COMPLEMENTARY SILICON
TIP29C 1 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 80-100 VOLTS 30 WATTS
TIP3055 Complemetary Silicon Power Transistors(互補硅功率晶體管)
TIP35C Complementary Silicon High Power Transistors(互補硅高功率晶體管)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TIP29C 制造商:STMicroelectronics 功能描述:TRANSISTOR NPN TO-220
TIP29C-BP 功能描述:兩極晶體管 - BJT NPN 100V 1A 30W RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
TIP29CG 功能描述:兩極晶體管 - BJT 1A 100V 30W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
TIP29C-S 功能描述:兩極晶體管 - BJT 100V 1A NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
TIP29CTSTU 功能描述:兩極晶體管 - BJT NPN Epitaxial Sil Short Leads RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2