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參數(shù)資料
| 型號(hào)： | TIP35B |
| 廠商： | Power Innovations International, Inc. |
| 英文描述： | NPN SILICON POWER TRANSISTORS |
| 中文描述： | NPN硅功率晶體管 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 107K |
| 代理商： | TIP35B |
TIP35, TIP35A, TIP35B, TIP35C
NPN SILICON POWER TRANSISTORS
P R O D U C T I N F O R M A T I O N
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
JULY 1968 - REVISED MARCH 1997
Copyright 1997, Power Innovations Limited, UK
G
Designed for Complementary Use with the
TIP36 Series
G
125 W at 25°C Case Temperature
G
25 A Continuous Collector Current
G
40 A Peak Collector Current
G
Customer-Specified Selections Available
SOT-93 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDTRAA
B
C
E
1
2
3
absolute maximum ratings
at 25°C case temperature (unless otherwise noted)
NOTES: 1. This value applies for t
p
≤
0.3 ms, duty cycle
≤
10%.
2. Derate linearly to 150°C case temperature at the rate of 1 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I
B(on)
= 0.4 A, R
BE
= 100
,
V
BE(off)
= 0, R
S
= 0.1
, V
CC
= 20 V.
RATING
SYMBOL
VALUE
UNIT
Collector-base voltage (I
E
= 0)
TIP35
TIP35A
TIP35B
TIP35C
TIP35
TIP35A
TIP35B
TIP35C
V
CBO
80
100
120
140
40
60
80
100
5
25
40
5
125
3.5
90
V
Collector-emitter voltage (I
B
= 0)
V
CEO
V
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Unclamped inductive load energy (see Note 4)
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
V
EBO
I
C
I
CM
I
B
P
tot
P
tot
LI
C
2
T
j
T
stg
T
L
V
A
A
A
W
W
mJ
°C
°C
°C
-65 to +150
-65 to +150
250
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TIP35C | NPN SILICON POWER TRANSISTORS |
| TIP36E | POWER TRANSISTORS(25A,120-160V,125W) |
| TIP35D | POWER TRANSISTORS(25A,120-160V,125W) |
| TIP35E | POWER TRANSISTORS(25A,120-160V,125W) |
| TIP35F | POWER TRANSISTORS(25A,120-160V,125W) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TIP35BG | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Complementary Silicon High?Power Transistors |
| TIP35B-S | 功能描述:兩極晶體管 - BJT 80V 25A NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| TIP35C | 功能描述:兩極晶體管 - BJT NPN Gen Pur Power RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| TIP35C | 制造商:Bourns Inc 功能描述:TRANSISTOR NPN SOT-93 |
| TIP35C_01 | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:TRIPLE DIFFUSED NPN TRANSISTOR |
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