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參數(shù)資料
| 型號： | TIP35C |
| 廠商： | Power Innovations International, Inc. |
| 英文描述： | NPN SILICON POWER TRANSISTORS |
| 中文描述： | NPN硅功率晶體管 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 107K |
| 代理商： | TIP35C |
TIP35, TIP35A, TIP35B, TIP35C
NPN SILICON POWER TRANSISTORS
2
JULY 1968 - REVISED MARCH 1997
P R O D U C T I N F O R M A T I O N
NOTES: 5. These parameters must be measured using pulse techniques, t
p
= 300 μs, duty cycle
≤
2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
electrical characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
V
(BR)CEO
Collector-emitter
breakdown voltage
I
C
= 30 mA
(see Note 5)
I
B
= 0
TIP35
TIP35A
TIP35B
TIP35C
TIP35
TIP35A
TIP35B
TIP35C
TIP35/35A
TIP35B/35C
40
60
80
100
V
I
CES
Collector-emitter
cut-off current
V
CE
= 80 V
V
CE
= 100 V
V
CE
= 120 V
V
CE
= 140 V
V
CE
= 30 V
V
CE
= 60 V
V
BE
= 0
V
BE
= 0
V
BE
= 0
V
BE
= 0
I
B
= 0
I
B
= 0
0.7
0.7
0.7
0.7
1
1
mA
I
CEO
Collector cut-off
current
Emitter cut-off
current
Forward current
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
voltage
Small signal forward
current transfer ratio
Small signal forward
current transfer ratio
mA
I
EBO
V
EB
= 5 V
I
C
= 0
1
mA
h
FE
V
CE
= 4 V
V
CE
= 4 V
I
B
= 1.5 A
I
B
= 5 A
V
CE
= 4 V
V
CE
= 4 V
I
C
= 1.5 A
I
C
= 15 A
I
C
= 15 A
I
C
= 25 A
I
C
= 15 A
I
C
= 25 A
(see Notes 5 and 6)
25
10
50
1.8
4
2
4
V
CE(sat)
(see Notes 5 and 6)
V
V
BE
(see Notes 5 and 6)
V
h
fe
V
CE
= 10 V
I
C
= 1 A
f = 1 kHz
25
|
h
fe
|
V
CE
= 10 V
I
C
= 1 A
f = 1 MHz
3
thermal characteristics
PARAMETER
MIN
TYP
MAX
UNIT
R
θ
JC
R
θ
JA
Junction to case thermal resistance
Junction to free air thermal resistance
1
°C/W
°C/W
35.7
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
t
on
t
off
Turn-on time
Turn-off time
I
C
= 15 A
V
BE(off)
= -4.15 V
I
B(on)
= 1.5 A
R
L
= 2
I
B(off)
= -1.5 A
t
p
= 20 μs, dc
≤
2%
1.2
0.9
μs
μs
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